Our Interests

We study the atomic arrangement structures, electronic states, electronic transport, and other quantum effects which are characteristic to artificial ‘ nano-scale structures ’ having dimensions around single-atomic thick, single-atomic wide, and single-atomic sizes. These nanometer-scale structures are fabricated by controlling ‘ surface superstructures’ formed on semiconductor crystal surfaces. Together with exploring the suitable structures and their fabrication conditions/procedures, various kinds of experimental techniques in ultrahigh vacuum, such as scanning tunneling microscopy/spectroscopy, electron microscopy/diffraction, photoemission spectroscopy, four-point probe methods, are utilized with making efforts for developing unique techniques. Topics are atomic arrangement structures, phase transitions in low dimensions, Fermiology, dynamical phenomena such as mass transport, adsorption, desorption and atomic layer growth, electronic transport properties, quantum size effects, and so on.

For atomic arrangement analysis;
Reflection-high-energy electron diffraction (RHEED)
Scanning electron microscopy(SEM), Scanning reflection electron micropscoy(SREM)
Scanning tunneling microscopy (STM) (at low, high, and room temperatures)
For electronic state analysis;
Angle-resolved-photoemission spectroscopy (ARPES)
(Complete-Brilluoin-zone-scanning angle-resolved photoemission spectroscopy)
Scanning tunneling spectroscopy (STS)
For transport measurements;
Macro-four-point probe method (Macro-4PP)
Macro-four-point probe method under strong magnetic fields (Magnetic-4PP)
Micro-four-point probe method combined with SEM (Micro-4PP)
Micro-four-point probe method at low temperatures (LT-4PP)
Four-tip STM (4T-STM)