報文

原著論文

  1. S. Hasegawa, K. Tsuchie, K. Toriyama, X. Tong, and T. Nagao: Surface electronic transport on silicon --- Donor- and acceptor-type adsorbates on Si(111)-√3×√3-Ag substrate---, Applied Surface Science 162/163, 42-47 (2000).
  2. S. Hasegawa, N. Sato, I. Shiraki, C. L. Petersen, P. Boggild, T. M. Hansen, T. Nagao, F. Grey：Surface-state Bands on silicon --- Si(111)-√3×√3-Ag surface superstructure ---：Japanese Journal of Applied Physics 39, 3815-3822 (2000).
  3. F. X. Shi, I. Shiraki, T. Nagao, S. Hasegawa: Diffusion Anisotropy of Ag and In on Si(111) Surface Studied by UHV-SEM, Ultramicroscopy 85, 23-33 (2000).
  4. F. X. Shi, I. Shiraki, T. Nagao, and S. Hasegawa: Substrate-structure dependence of Ag electromigration on Au-precovered Si(111) surfaces, Japanese Journal of Applied Physics 39, 4438-4442 (2000).
  5. T. Nagao, T. Sekiguchi, and S. Hasegawa: Epitaxial growth of single-crystal ultrathin film of Bi on the Si(111) surface, Japanese Journal of Applied Physics 39, 4567-4570 (2000).
  6. S. Hasegawa: Surface-State Bands on Silicon as Electron Systems in Reduced Dimensions at Atomic Scales, Journal of Physics: Condensed Matters, 12, R463-R495 (2000).
  7. T. Nagao and S. Hasegawa: Construction of an ELS-LEED -- an electron energy-loss spectrometer with electrostatic two-dimensional angular scanning --, Surface and Interface Analysis 30, 488-492 (2000).
  8. I. Shiraki, C. L. Petersen, P. Boggild, T. M. Hansen, T. Nagao, F. Grey, and S. Hasegawa: Micro-four-point probes in an UHV-scanning electron microscope for in-situ surface conductivity measurements, Surface Review and Letters 7, 533-537 (2000).
  9. C. L. Petersen, F. Grey, I. Shiraki, S. Hasegawa: Microfour-point probe for studying electronic transport through surface states, Appllied Physics Letters 77, 3782-3784 (2000).
  10. I. Matsuda, H.-W. Yeom, T. Tanikawa, K. Tono, T. Nagao, S. Hasegawa, and T. Ohta: Growth and electron quantization of the metastable silver films on Si(001), Physical Review B63, 125325-125334 (2001).
  11. F.X. Shi, I. Shiraki, T. Nagao, and S. Hasegawa: Electromigration and phase transformation of Ag on a Cu-precovered Si(111) surface, Surface Science 印刷中 (2001).
  12. T. Sekiguchi, F. Shimokoshi, T. Nagao, and S. Hasegawa: A series of Ca-induced reconstructions on Si(111) surface, Surface Science 印刷中 (2001).
  13. S. V. Ryjkov, T. Nagao, V. G. Lifshits, and S. Hasegawa: Surface roughness and electrical resistance on Si(100)-2×3-Na surface, Surface Science 印刷中 (2001).
  14. T. Nagao, T. Hildebrandt, M. Henzler, S. Hasegawa: Two-dimensional plasmon in a surface-state band, Surface Science 印刷中 (2001).
  15. T. Nagao, T. Hildebrandt, M. Henzler, and S. Hasegawa: Sheet plasma in a two-dimensional electron liquid in a surface-state band, Physical Review Letters, 印刷中(2001).
  16. T. Tanikawa, I. Matsuda, T. Nagao, and S. Hasegawa: Growth mode and electrical conductance of Ag atomic layers on Si(001) surface, Surface Science 印刷中 (2001)
  17. I. Shiraki, F. Tanabe, R. Hobara, T. Nagao, and S. Hasegawa: Independently driven four-tip probes for conductivity measurements in ultrahigh vacuum, Surface Science 印刷中 (2001).
  18. S. V. Ryjkov, T. Nagao, V. G. Lifshits, and S. Hasegawa:Phase transition and stability of Si(111)-8x'2'-In surface phase at low temperature, Surface Science 印刷中 (2001).

会議抄録

  1. T. Nagao, T. Hildebrandt, M. Henzler, S. Hasegawa: Observation of two-dimensional plasmon in a metallic monolayer on silicon surface, Proceedings of 25th International Conference on the Physics of Semiconductors (ICPS25), 印刷中.

総説

  1. S. Hasegawa and F. Grey: Electronic transport at semiconductor surfaces --- From point-contact transistor to micro-four-point probes ---, Surface Science 500, 印刷中 (2001).

国内雑誌

  1. 長谷川修司：半導体表面の電子輸送 -- 原子スケール低次元電子系としてのシリコン表面電子バンド --, 物性研究 75, 494-511 (2000, 12).
  2. 長谷川修司：結晶表面の１原子層に電気を流す -- 点接触トランジスタから多探針ＳＴＭへ--, 学術月報 53 1269-1274 (2000, 12).
  3. 長尾忠昭：ELS―LEEDによるヘテロ層界面のナノ構造制御、（財）日本板硝子材料工学助成会成果報告書第18号、91-95 (2000).