報文

原著論文

1. H. Morikawa, I. Matsuda, S. Hasegawa: STM Observation of Si(111)-$\alpha$-$\sqrt{3} \times \sqrt{3}$-Sn at low temperature, Physical Review {\bf B 65}, 201308(R) (2002).
2. S. Hasegawa, I. Shiraki, T. Tanikawa, C. L. Petersen, T. M. Hansen, P. Goggild, and F. Grey: Direct measurement of surface-state conductance by microscopic four-point probe method, Journal of Physics: Condensed Matter {\bf 14}, 8379 (2002).
3. G. LeLay, A. Cricenti, C. Ottaviani, P. Perfetti, T. Tanikawa, I. Matsuda, S. Hasegawa: Evidence of asymmetric dimers down to 40 K at the clean Si(100) surface, Physical Review {\bf B 66}, 153317 (2002).
4. S. Hasegawa, I. Shiraki, F. Tanabe, and R. Hobara: Transport at surface nanostructures measured by four-tip STM, Current Applied Physics {\bf 2}, 465 (2002).
5. T. Inaoka, T. Nagao, S. Hasegawa, T. Hildebrandt, M. Henzler: Two-dimensional plasmon in a metallic monolayer on a semiconductor surface; exchange-correlation effects, Physical Review {\bf B 66}, 245320 (2002).
6. I. Matsuda, T. Ohta, and H. W. Yeom: In-plane dispersion of the quantum-well states of the epitaxial silver films on silicon, Physical Review B {\bf 65}, 085327 (2002).
7. I. Matsuda and H. W. Yeom: The study of the quantum-well states in the ultra-thin silver film on the Si surface, Journal of Electron Spectroscopy and Related Phenomena {\bf 126}, 101 (2002)
8. M. Ueno, I. Matsuda, C. Liu, and S. Hasegawa, Step edges as reservoirs of adatom gas on a surface, Japanese Journal of Applied Physics, in press (2003).
9. C. Liu, I. Matsuda, H. Morikawa, H. Okino, T. Okuda, T. Kinoshita, and S. Hasegawa, Si(111)-$\sqrt{21} \times \sqrt{21}$-(Ag+Cs) surface studied by scanning tunneling microscopy and angle-resolved photoemission spectroscopy, Japanese Journal of Applied Physics, in press (2003).
10. H. W. Yeom, J. W. Kim, K. Tono, I. Matsuda, and T. Ohta: Electronic structure of the monolayer and double-layer Ge on Si(001), Physical Review B , in press (2003).

総説

1. S. Hasegawa, I. Shiraki, F. Tanabe, R. Hobara, T. Kanagawa, T. Tanikawa, I. Matsuda, C. L. Petersen, T. M. Hansen, P. Boggild, F. Grey: Electrical conduction through surface superstructures measured by microscopic four-point probes, Surface Review and Letters, in press (2003).

国内雑誌

1. 長谷川修司、白木一郎、田邊輔仁、保原麗、金川泰三、谷川雄洋、松田巌、Christian L. Petersen、Torben M. Hanssen、Peter Boggild、Francois Grey: ミクロな４端子プローブによる表面電気伝導の測定、表面科学 {\bf 23}, 740 (2002).
2. 松田巌、Han Woong Yeom、谷川雄洋、登野健介、長谷川修司、太田利明: 半導体表面上金属超薄膜の量子井戸状態の研究、表面科学 {\bf 23}, 43 (2002).
3. 長谷川修司、白木一郎、田邊輔仁、保原麗、金川泰三、松田巌：４探針ＳＴＭの開発と表面電子輸送の測定、電子顕微鏡 {\bf 38}, 36 (2003).

著書

1. 長谷川修司（分担執筆）：物理学大事典（第11.8節 表面）（鈴木増雄、荒船次郎、和達三樹編集、朝倉書店）, 印刷中.
2. 長谷川修司（分担執筆）：表面科学の基礎と応用 （日本表面科学会編集、ＮＴＳ）, 印刷中.

学位論文

1. 谷川雄洋:マイクロ４端子プローブ法による表面相転移での電子輸送の研究 （博士論文）.
2. 金川泰三:正方４端子プローブ法による表面電気伝導の異方性の測定（修士論文）.
3. 劉燦華:セシウムと銀が共吸着したシリコン表面の原子配列と電子構造（修士論文）.