報文

原著論文

  1. J. T. Sadowski, T. Nagao, M. Saito, A. Oreshkin, S. Yaginuma, S. Hasegawa, T. Ohno, and T. Sakurai:
    STM/STS Stduies of the Structural Phase Transition in the Growth of Ultra-Thin Bi Films on Si(111),　
    ACTA PHYSICA POLONICA A 104, 381-387 (2003).
  2. H. Okino, I. Matsuda, T. Tanikawa, and S. Hasegawa:
    Formation of Facet Structures by Au Adsorption on Vicinal Si(111) Surfaces,
    e-Journal of Surface Science and Nanotechnology 1, 84-90 (2003).
  3. S. V. Ryjkov, S. Hasegawa, V. G. Lifshits:
    Epitaxial Growth of Ag on Si(111)-4×1-In Surface Studied by RHEED, STM, and Electrical Resistance Measurements,
    e-Journal of Surface Science and Nanotechnology 1, 72-79 (2003).
  4. T. Tanikawa, I. Matsuda, R. Hobara, and S. Hasegawa:
    Variable-temperature micro-four-point probe method for surface electrical conductivity measurements in ultrahigh vacuum,
    e-Journal of Surface Science and Nanotechnology 1, 50-56 (2003).
  5. T . Tanikawa , K . Yoo, I . Matsuda, and S. Hasegawa:
    Non-Metallic Transport Property of the Si(111)7×7 Surface,
    Physical Review B 68, 113303 (2003).
  6. T. Kanagawa, R. Hobara, I. Matsuda, T. Tanikawa, A. Natori, and S. Hasegawa:
    Anisotropy in conductance of a quasi-one-dimensional metallic surface state measured by square micro-four-point probe method,
    Physical Review Letters 91, 036805 (2003).
  7. T. M. Hansen, K. Stokbro, O. Hansen, T. Hassenkam, I. Shiraki, S. Hasegawa, P. Boggild:
    Resolution enhancement of scanning four-point probe measurement on 2D systems,
    Review of Scientific Instruments 74, 3701-3708 (2003).
  8. T. Sekiguchi, T. Nagao, and S. Hasegawa:
    Transformation dynamics in Ca-induced reconstructions on Si(111) surface,
    e-Journal of Surface Science and Nanotechnology 1, 26-32 (2003).
  9. I. Matsuda, H. Morikawa, C.-H. Liu, S. Ohuchi, S. Hasegawa, T. Okuda, T. Kinoshita, C. Ottaviani, A. Cricenti, M. D'angelo, P. Soukiassian, and G. LeLay:
    Electronic evidence of symmetry breakdown in surface structure,
    Physical Review B 68, 085407 (2003).
  10. T. Ikuno, M. Katayama, N. Yamauchi, W. Wongwiriyapan, S. Honda, K. Oura, R. Hobara, and S. Hasegawa:
    Selective Growth of Straight Carbon Nanotubes by Low-Pressure Thermal Chemical Vapor Deposition,
    Japanese Journal of Applied Physics 43, 860-863 (2004).
  11. T. Hirahara, I. Matsuda, and S. Hasegawa:
    Photoemission Structure Factor Effect for Fermi Rings of the Si(111)√3×√3-Ag Surface,
    e-Journal of Surface Science and Nanotechnology 2, 141-145 (2004).
  12. H. W. Yeom, J. W. Kim, K. Tono, I. Matsuda, and T. Ohta:
    Electronic Structure of the monolayer and double-layer Ge on Si(001),
    Physical Review B 67, 085310 (2003).
  13. I. Matsuda, M. Hengsberger, F. Baumberger, T. Greber, H. W. Yeom, and J. Osterwalder:
    Reinvestigation of the band structure of the Si(111)5×2-Au surface,
    Physical Review B 68, 195319 (2003).
  14. C. Liu, I. Matsuda, and S. Hasegawa:
    STM observation at initial stage of Cs adsorption on Si(111)-√3x√3-Ag surface,
    Surface and Interface Analysis, in press (2004).
  15. T. Tanikawa, I. Matsuda, T. Kanagawa, and S. Hasegawa:
    Surface-state electrical conductivity at a metal-insulator transition on silicon,
    Physical Review Letters, in press (2004).


総説

  1. S. Hasegawa, I. Shiraki, F. Tanabe, R. Hobara, T. Kanagawa, T. Tanikawa, I. Matsuda, C. L. Petersen, T. M. Hansen, P. Boggild, F. Grey:
    Electrical conduction through surface superstructures measured by microscopic four-point probes,
    Surface Review and Letters 10, 963-980 (2003).
  2. I. Matsuda, T. Tanikawa, S. Hasegawa, H. W. Yeom, K. Tono, and T. Ohta:
    Quantum-well states in ultra-thin metal films on semiconductor surfaces,
    e-Journal of Surface Science and Nanotechnology 2, 169-177 (2004).

国内雑誌

  1. 上野将司、松田巌、劉燦華、原沢あゆみ、奥田太一、木下豊彦、長谷川修司：
    表面上の２次元吸着原子ガス相と内殻光電子分光,
    表面科学 24, 556 (2003).
  2. 守川春雲、松田巌、長谷川修司：
    シリコン表面上での電荷密度波の格子整合効果とソリトンダイナミクス,
    表面科学、印刷中 (2004).

著書

  1. 日本表面科学会編、長谷川修司、他（分担執筆）：
    ナノテクノロジーのための走査電子顕微鏡、（表面分析技術選書）（丸善, 2004）、
    第5.2.節 プローブ顕微鏡との複合化.
  2. 長谷川修司（分担執筆）：
    表面科学の基礎と応用 （日本表面科学会編集、ＮＴＳ）,印刷中.