顧 艶
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顧 艶 |
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學如逆水行舟，不進則退。
（2008年9月修了・帰国） |
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在籍 2006/October/1～2008/September/31
学位論文 Electronic Structure and Transport of Snterminated Silicon Surface（修士論文）
現所属
投稿論文
- T. Hirahara, T. Komorida, Y. Gu, F. Nakamura, H. Izuchi, H. Morikawa, and S.
Hasegawa:
Insulating conduction in Sn/Si(111):
Possibility of a Mott insulating ground state and metallization/localization
induced by carrier doping,
Phys. Rev. B 80, 235419 (Dec,
2009). 
学会発表
- Y. Gu,T.
Hirahara, H. Morikawa, S.
Hasegawa:
An
insulating ground state of Si(111) √3×√3-Sn revealed by micro-four-pointprobe
conductivity measurements,
The 4th Vacuum and
Surface Sciences Conference of Asia and Australia (VASSCAA-4), 2008年10月29日、松江.
- Y. Gu,T.
Hirahara, H. Morikawa, S.
Hasegawa:
An
insulating ground state of Si(111) √3×√3-Sn revealed by micro-four-pointprobe
conductivity measurements,
International Symposium on
Surface Science and Nanotechnology (ISSS-5), 2008年11月12日、早稲田大学.
- Yan Gu，平原徹，長谷川修司:
表面状態電気伝導測定によるSn/Si(111)の基底状態の研究,
日本物理学会2008秋季大会2008年9月22日、岩手大学.
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