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ŠwˆÊ˜_•¶@@@@Electronic Structure and Transport of Snterminated Silicon SurfaceiCŽm˜_•¶j

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  1. T. Hirahara, T. Komorida, Y. Gu, F. Nakamura, H. Izuchi, H. Morikawa, and S. Hasegawa:
    Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping,
    Phys. Rev. B 80, 235419 (Dec, 2009).

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  1. Y. Gu,T. Hirahara, H. Morikawa, S. Hasegawa:
    An insulating ground state of Si(111) ã3~ã3-Sn revealed by micro-four-pointprobe conductivity measurements,
    The 4th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-4)
    , 2008”N10ŒŽ29“úA¼].


  2. Y. Gu,T. Hirahara, H. Morikawa, S. Hasegawa:
    An insulating ground state of Si(111) ã3~ã3-Sn revealed by micro-four-pointprobe conductivity measurements,
    International Symposium on Surface Science and Nanotechnology (ISSS-5)
    , 2008”N11ŒŽ12“úA‘ˆî“c‘åŠw.


  3. Yan GuC•½Œ´“OC’·’JìCŽi:
    •\–ʏó‘Ô“d‹C“`“±‘ª’è‚É‚æ‚éSn/Si(111)‚ÌŠî’êó‘Ô‚ÌŒ¤‹†,
    “ú–{•¨—Šw‰ï2008H‹G‘å‰ï2008”N9ŒŽ22“úAŠâŽè‘åŠw
    .