Serguei Ryjkov

現所属

• ロシア科学アカデミー 自動プロセス制御研究所 主任研究員

投稿論文

1. S. V. Ryjkov, T. Nagao, V. G. Lifshits, and S. Hasegawa:
   Surface roughness and electrical resistance on Si(100)-2×3-Na surface,
   Surface Scie. 493(2001) 619-625.
   
   
2. S. V. Ryjkov, T. Nagao, V. G. Lifshits, and S. Hasegawa:
   Phase transition and stability of Si(111)-8ב2’-In surface phase at low temperatures,
   Surface Science 488 (2001) 15-22.
   
   
3. S. S. Lee, J. R. Ahn, N. D. Kim, J. H. Min, C. G. Hwang, J. W. Chung, H. W. Yeom, S. V. Ryjkov, S. Hasegawa:
   Adsorbate-induced pinning of a charge-density wave in the quasi-1D metallic chains; Na-added In/Si(111)-4x1 system,
   Physical Review Letters 88, 196401 (2002).
   
   
4. S. V. Ryjkov, S. Hasegawa, V. G. Lifshits,
   Epitaxial Growth of Ag on Si(111)-4x1-In SurfaceStudied by RHEED, STM, and Electrical Resistance Measurements,
   e-Journal of Surface Science and Nanotechnology 1, 72-79 (2003).

学会発表

1. S. V. Ryjkov, V. G. Lifshits, T. Nagao, and S. Hasegawa:
   Structural and transport properties of Si(001)2×3-Na surface,
   International Symposium on Surface and Interfaces: Properties of Different Symmetry Crossing, 2000年10月18日（Nagoya）.
   
   
2. S. V. Ryjkov, V. G. Lifshits, T. Nagao, and S. Hasegawa:
   Effects of surface structures on electrical resistance of silicon,
   The 4th Japan-Russia Seminar on Semiconductor Surfaces, 2000年11月13日（Nagoya）.
   
   
3. S. V. Ryjkov, V. G. Lifshits, T. Nagao, and S. Hasegawa:
   Structural transformations on silicon: effect on electrical resistance,
   251st WE-Heraeus Seminar on 2D Conductivity in Surface States and Monolayers, 2001年3月7日（Bad Honnef, Germany）.
   
   
4. S. V. Ryjkov、長尾忠昭、V. Lifshits、長谷川修司：
   Epitaxial growth of Ag on Si(111)-4×1-In surface、
   日本物理学会 第５５回年次大会、2000年9月24日（新潟大学）.
   
   
5. S. Ryjkov, T. Nagao, and S. Hasegawa:
   Epitaxial growth and resistance of Ag on Si(111)-4×1-In surfaces,
   The 3rd SANKEN International Symposium, 2000年3月15日(Osaka, Japaan).