Serguei Ryjkov
現所属
- ロシア科学アカデミー 自動プロセス制御研究所 主任研究員
投稿論文
- S. V. Ryjkov, T. Nagao, V. G. Lifshits, and S. Hasegawa:
Surface roughness and electrical resistance on Si(100)-2×3-Na surface,
Surface Scie. 493(2001) 619-625.
- S. V. Ryjkov, T. Nagao, V. G. Lifshits, and S. Hasegawa:
Phase transition and stability of Si(111)-8ב2’-In surface
phase at low temperatures,
Surface Science 488 (2001) 15-22.
- S. S. Lee, J. R. Ahn, N. D. Kim, J. H. Min, C. G. Hwang, J. W. Chung, H. W.
Yeom, S. V. Ryjkov, S. Hasegawa:
Adsorbate-induced pinning
of a charge-density wave in the quasi-1D metallic chains; Na-added
In/Si(111)-4x1 system, Physical Review Letters 88, 196401
(2002).
- S.
V. Ryjkov, S. Hasegawa, V. G. Lifshits,
Epitaxial Growth of Ag on Si(111)-4x1-In SurfaceStudied
by RHEED, STM, and Electrical Resistance Measurements,
e-Journal of Surface Science and Nanotechnology 1, 72-79 (2003).
学会発表
- S. V. Ryjkov, V. G. Lifshits, T. Nagao, and S. Hasegawa:
Structural and transport properties of Si(001)2×3-Na surface,
International Symposium on Surface and Interfaces: Properties of Different
Symmetry Crossing, 2000年10月18日(Nagoya).
- S. V. Ryjkov, V. G. Lifshits, T. Nagao, and S. Hasegawa:
Effects of surface structures on electrical resistance of silicon,
The 4th Japan-Russia Seminar on Semiconductor Surfaces, 2000年11月13日(Nagoya).
- S. V. Ryjkov, V. G. Lifshits, T. Nagao, and S. Hasegawa:
Structural transformations on silicon: effect on electrical resistance,
251st WE-Heraeus Seminar on 2D Conductivity in Surface States and Monolayers, 2001年3月7日(Bad Honnef, Germany).
- S. V. Ryjkov、長尾忠昭、V. Lifshits、長谷川修司:
Epitaxial growth of Ag on Si(111)-4×1-In surface、
日本物理学会 第55回年次大会、2000年9月24日(新潟大学).
- S. Ryjkov, T. Nagao, and S. Hasegawa:
Epitaxial growth and resistance of Ag on Si(111)-4×1-In surfaces,
The 3rd SANKEN International Symposium, 2000年3月15日(Osaka, Japaan).
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