Now Program is available
Program at Glance
Program in Detail
The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS10) will
be held at University of Tokyo, Hongo, Tokyo, Japan, on September 26 to
28. The idea of this seminar was born in 1991 when Prof. K. Oura (Osaka
Univ.) and Prof. V.G. Lifshits (Inst. Automation and Control Processes,
RAS) met each other for the first time. It was discussed and confirmed
that such seminar could be an excellent opportunity for direct exchange
of information and personal contacts among Russian and Japanese colleagues.
As a result, the first Russia-Japan seminar on Semiconductor Surfaces was
held in Vladivostok, Russia in 1993. The following seminars were held almost
every second year at Vladivostok and Japan alternately.
The subjects of the
seminar include all kinds of surface and interface properties of semiconductors,
such as surface and interface structures, surface phase transition, surface
reaction, metal-semiconductor junctions, insulator-semiconductor junctions,
epitaxial growth, nano-structures, tunneling phenomena, and electric, thermal
and mechanical properties of semiconductor surface and interfaces, etc.
RJSSS-1 September 5-12 1993 (Vladivostok)
November 11-17, 1995 (Osaka)
RJSSS-3 September 18-25, 1998 (Vladivostok)
JRSSS-4 November 12-19, 2000 (Nagoya) RJSSS-5 September 15-20, 2002
October 10-17, 2004 (Toyama) RJSSS-7 September 17-21, 2006
October 19-23, 2008 (Sendai)
RJSSS-9 September 26-30, 2010 (Vladivostok)
For Japanese and third-country participants
Prof. Shuji HASEGAWA
Physics, School of Science, University of Tokyo
7-3-1 Hongo, Bunkyo-ku, Tokyo
Tel/Fax (Direct) +81-3-5841-4167
For Russian participants
Prof. Saranin A.A.