Publication List　　
　　[Times Cited according to ISI and J-Stage at Dec 2021]
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2025

  1. 長谷川修司:
    JPS Anniversary Years 2025-2027が開幕！
    日本物理学会誌 80 (1), 1, 巻頭言 (Jan, 2025).
  2. 長谷川修司:
    今年は国際量子科学技術年です
    Isotope News (日本アイソトープ協会), 巻頭言 (Feb, 2025).

  3. 長谷川修司:
    留学経験のない研究者からの留学のすすめ
    表面と真空 68 (2), (Feb, 2024)

2024

  1. 長谷川修司:
    ベテラン会員諸氏，大会では英語で一般講演をしよう！
    日本物理学会誌 79 (1), 1, 巻頭言 (Jan, 2024)

  2. 高城:拓也
    強磁性トポロジカル絶縁体を用いた超薄膜における新奇磁気構造の発見（談話室：新博士登場）
    表面と真空 67 (3), 132, (Mar, 2024)

  3. 長谷川修司:
    日本物理学会 第80期会長メッセージ
    JPS the 80th President's Message
    日本物理学会Webページ (April, 2024)
  4. Shuji Hasegawa:
    Surface and Interface Physics Driven by Quantum Materials
    Applied Physics Express 17, 050101 (pp.20) (Jun, 2024) (Open access)

  5. 長谷川修司:
    基礎講座： 今聞こう、魅力的な予算申請の執筆方法
    応用物理 93 (7), 424-428(Jul, 2024).

  6. Ibuki Taniuchi, Ryota Akiyama, Rei Hobara, and Shuji Hasegawa:
    Surface Circular Photogalvanic Effect in Tl-Pb Monolayer Alloys on Si(111) with Giant Rashba Splitting
    ACS Nano, in press.MS, Supplement
  7. Shuji Hasegawa:
    Surface and Edge States of Quantum Materials
    Coshare Science 02, under edition.
  8. 遠藤由大、秋山了太、長谷川修司:
    SiC基板上のグラフェンへのインターカレーション過程での積層構造変化
    まてりあ（日本金属学会会報） 63 (12), 829-835 (Dec, 2024)    .

2023

  1. Yukihiro Endo, Meng Li, Ryota Akiyama, Xue Yan, Christian Brandl, Jefferson Zhe Liu, Rei Hobara, Shuji Hasegawa, Weishi Wan, K. S. Novoselov and Wen-Xin Tang:
    Dynamic topological domain walls driven by lithium intercalation in graphene
    Nature Nanotechnology 18, 1154-1161 (Jul, 2023) DOI Video 1, Video 2 News & Views     Press Release1, Press Release 2

  2. T. Kobayashi, Y. Toichi, K. Yaji, Y. Nakata, Y. Yaoita, M. Iwaoka, M. Koga, Y. Zhang, J. Fujii, S. Ono, Y. Sassa, Y. Yoshida, Y. Hasegawa, F. Komori, S. Shin,S. Ichinokura, R. Akiyama,S. Hasegawa, T. Shishidou,M. Weinert, K. Sakamoo:
    Revealing the hidden spin-polarized bands in a superconducting Tl bilayer crystal
    Nano Letters 23(16), 7675-7682 (Aug, 2023) Open Access.

  3. Ibuki Taniuchi, Ryota Akiyama, Rei Hobara, and Shuji Hasegawa:
    Surface Circular Photogalvanic Effect in Tl-Pb Monolayer Alloys on Si(111) with Giant Rashba Splitting
    submitted. arXiv
  4. 秋山了太:
    談話室（受賞者紹介）室温ウェッティング層形成法 による原子層レベルで 平坦な SnTe(001) 薄膜の 成長とその電気伝導測定
    表面と真空 66(8), 496 (Aug, 2023).

  5. 秋山了太, 高城拓也, 黒田眞司, 長谷川修司:
    ポロジカル絶縁体と強磁性の協奏効果
    表面と真空 66(1), 28-33 (Jan, 2023).

  6. 遠山晴子:
    原子層二次元構造における超伝導の特性解明 （受賞者紹介）
    表面と真空 66(1), 60 (Jan, 2023).

  7. 長谷川修司:
    全国物理コンテスト「物理チャレンジ」から国際物理オリンピックへ
    じっきょう理科資料 93号, 20-23 (実教出版, April, 2023)

  8. 長谷川修司:
    日本物理学会 第79期会長メッセージ
    JPS the 79th President's Message
    日本物理学会Webページ (April, 2023)

  9. 長谷川修司:
    物理学会のほどよいサイズは？ ―会長就任にあたり―
    日本物理学会誌 78 (4), 177-177, 巻頭言 (April, 2023)

  10. 長谷川修司:
    巻頭言： いよいよコロナ明け ～若手を元気に～
    応用物理学会 薄膜・表面物理分科会 News Letters No. 182, p. 1 (March, 2023)

  11. 長谷川修司:
    薄膜・表面物理のための磁性・スピントロ二クス入門
    応用物理学会 薄膜・表面物理分科会 News Letters No. 182, pp. 2-9 (March, 2023)

2022

  1. Takuya Takashiro, Ryota Akiyama, Ivan A. Kibirev, Andrey V. Matetskiy, Ryosuke Nakanishi, Shunsuke Sato, Takuro Fukasawa, Taisuke Sasaki, Haruko Toyama, Kota L. Hiwatari, Andrey V. Zotov, Alexander A. Saranin, Toru Hirahara, Shuji Hasegawa::
    Soft-magnetic skyrmions induced by surface-state coupling in an intrinsic ferromagnetic topological insulator sandwich structure
    Nano Letters 22(3), 881-887 (Jan, 2022) [Times Cited 6] プレスリリース     マイナビ　BIGLOBEニュース　Tii技術情報　科学新聞

  2. T. Machida, Y. Yoshimura, T. Nakamura, Y. Kohsaka, T. Hanaguri, C.-R. Hsing, C.-M. Wei, Y. Hasegawa, S. Hasegawa, and A. Takayama:
    Superconductivity near the saddle point in the two-dimensional Rashba system Si(111)-√3×√3-(Tl,Pb)
    Physical Review B 105, 064507 (9pp) (Feb, 2022) 　[Times Cited 1]     arXiv

  3. H. Toyama, R. Akiyama, M. Hashizume, S. Ichinokura, T. Iimori, T. Matsui, K. Horii, S. Sato, R. Hobara, Y. Endo, T. Hirahara, F. Komori, S. Hasegawa:
    Two-dimensional superconductivity of the Ca-intercalated graphene on SiC: vital role of the interface between monolayer graphene and the substrate
    ACS Nano 16(3), 3582-3592 (Feb, 2022) [Times Cited 14]　 プレスリリース     　日本経済新聞　Yahoo News EETimes Japan　 arXiv

  4. Ryota Akiyama, Ryo Ishikawa, Kazuhiro Akutsu-Suyama, Ryosuke Nakanishi, Yuta Tomohiro, Kazumi Watanabe, Kazuki Iida, Masanori Mitome, Shuji Hasegawa, Shinji Kuroda:
    Direct probe of ferromagnetic proximity effect at the interface in SnTe/Fe heterostructure by polarized neutron reflectometry
    The Journal of Physical Chemistry Letters 13, 8228-8235 (Aug, 2022).[Times Cited 3]　arXiv　プレスリリース

  5. 秋山了太、長谷川修司:
    Ca原子を挿入したグラフェンで新規な超伝導への進化をとらえる
    理学部ニュース2022年7月号 p. 4 (Jul, 2022)

  6. 長谷川修司:
    IPhO2022ベラルーシ大会の中止と代替スイス大会の開催
    JPhO News Letter 34, p. 8 (Jul, 2022).

  7. 長谷川修司:
    薄膜・表面物理のための磁性・スピントロ二クス入門
    第50回薄膜・表面物理セミナー『二次元磁性体研究の最前線』 （応用物理学会・薄膜表面物理分科会）pp. 1-8 (Jul, 2022).

  8. 遠山晴子、秋山了太、長谷川修司:
    カルシウムのインターカレートにより誘起される特異なグラフェン超伝導
    固体物理 57(10), 593-606 (Oct. 2022).

  9. 高城拓也, 秋山了太, I. A. Kibirev, A. V. Matetskiy, 中西亮介, 佐藤瞬亮, 深澤拓朗, 佐々木泰祐, 遠山晴子, 樋渡功太, A. V. Zotov, A. A. Saranin, 平原徹, 長谷川修司:
    自己形成型強磁性原子層を持つトポロジカル絶縁体によるサンドイッチ構造での軟磁性的スキルミオンの電気的観測
    表面と真空 65(9), 405-410 (Sep, 2022).

2021

  1. Takuya Takashiro, Ryota Akiyama, Ivan A. Kibirev, Andrey V. Matetskiy, Ryosuke Nakanishi, Shunsuke Sato, Takuro Fukasawa, Taisuke Sasaki, Haruko Toyama, Kota L. Hiwatari, Andrey V. Zotov, Alexander A. Saranin, Toru Hirahara, Shuji Hasegawa::
    Soft-magnetic skyrmions induced by surface-state coupling in an intrinsic ferromagnetic topological insulator sandwich structure
    Nano Letters, accepted. arXiv (May, 2021)
  2. Hongrui Huang, Azizur Rahman, Jianlin Wang, Yalin Lu, Ryota Akiyama, Shuji Hasegawa:
    Spin-glass-like state induced by Mn-doping into a moderate gap layered semiconductor SnSe2
    Journal of Applied Physics 130, 223903(6pp) (Dec, 2021). [Times Cited 1]
  3. H. Toyama, R. Akiyama, M. Hashizume, S. Ichinokura, T. Iimori, T. Matsui, K. Horii, S. Sato, R. Hobara, Y. Endo, T. Hirahara, F. Komori, S. Hasegawa:
    Two-dimensional superconductivity of the Ca-intercalated graphene on SiC: vital role of the interface between monolayer graphene and the substrate
    submitted (Nov, 2021) arXiv
  4. 長谷川修司:
    トポロジカル物質とは何か ―最新・物質科学入門―
    講談社ブルーバックス (Jan 21, 2021)
  5. 長谷川修司:
    巻頭言：男女共同△、ダイバーシティ、コロナ禍
    表面と真空 64(3), (Mar, 2021).

  6. 遠藤由大，深谷有喜，望月出海，高山あかり，兵頭俊夫*，長谷川修司:
    全反射高速陽電子回折（TRHEPD）によるCa挿入2層グラフェン超伝導材料の原子配列解明
    陽電子科学　16, 23-29 (Apr, 2021)（日本陽電子科学会）.

  7. 長谷川修司:
    多探針走査トンネル顕微鏡 (セクション24.8)
    in 『図説 表面分析ハンドブック』　（日本表面真空学会編, 朝倉書店, Jun, 2021）

  8. 長谷川修司:
    国際物理オリンピック2021 リトアニア大会 オンライン参加
    JPhO News Letter 31, pp. 5-6 (Sep, 2021).

  9. 長谷川修司:
    スピン流を測る (理学の謎 第15回)
    理学部ニュース　9月号, p. 14 (Sep, 2021).

2020 (8)

  1. Y. Takeuchi, R. Hobara, R. Akiyama, A. Takayama, S. Ichinokura, R. Yukawa, I. Matsuda, S. Hasegawa:
    Two-dimensional conducting layer on SrTiO3 surface induced by hydrogenation
    Phys. Rev. B 101, 085422(6pp) (Feb, 2020) APS [Times Cited 3]
  2. Di Fan , Rei Hobara, Ryota Akiyama , and Shuji Hasegawa:
    Inverse Spin Hall Effect Induced by Asymmetric Illumination of Light on Topological Insulator Bi2Se3
    Phys. Rev. Res, 2, 023055 (Apr, 2020) APS (open access) [Times Cited 7].

  3. Y. C. Lau, R. Akiyama, H. Hirose, R. Nakanishi, T. Terashima, S. Uji, S. Hasegawa, M. Hayashi
    Concomitance of superconducting spin-orbit scattering length and normal state spin diffusion length in W on (Bi,Sb)2Te3
    Journal of Physics: Materials 3, 034001 (Apr, 2020) IOP (open access) [Times Cited 2].

  4. H. Huang, H. Toyama, L. V. Bondarenko, A. Y. Tupchaya, D. V. Gruznev, A. Takayama, R. Hobara, R. Akiyama, A. V. Zotov, A. A. Saranin, and S. Hasegawa :
    Superconducting proximity effect in a Rashba-type surface state of Pb/Ge(111)
    Superconductor Science and Technology 33, 075007(8pp) (Jun, 2020). [Times Cited 3] IOP

  5. N. Fukui, R. Hobara, A. Takayama, R. Akiyama, T. Hirahara, S. Hasegawa:
    Scattering of topological surface-state carriers at steps on surfaces
    Phys. Rev. B 102, 115418 (Sep, 2020), APS [Times Cited 4]
  6. 長谷川修司：
    考える実験 ― 国際物理オリンピック2006の実験問題
    日本物理学会誌 75 (9), 576-579 (Sep, 2020)

  7. 遠藤由大、高山あかり、長谷川修司：
    全反射高速陽電子回折法を用いたグラフェン超伝導材料の原子配列解析
    Isotope News (日本アイソトープ協会） No. 771, pp. 15-18 (Oct, 2020).

  8. 長谷川修司、東辻浩夫：
    ヨーロッパ物理オリンピック2020オンライン大会に参加
    大学の物理教育 26 (3), 128-132 (Nov, 2020).

2019(10)

  1. T. Nakamura, A. Takayama, R. Hobara, D.V. Gruznev, A.V. Zotov, A.A. Saranin, S. Hasegawa:
    Superconducting single-atomic-layer Tl-Pb compounds on Ge(111) and Si(111) surfaces
    Applied Surface Science 479, 679-684 (Feb, 2019), [Times Cited 12]

  2. S. Hasegawa:
    Charge and Spin Transport on Surfaces and Atomic Layers Measured by Multi-Probe Techniques
    J. Phys.: Cond. Matt. 31, 223001 (Mar, 2019) (Topical Review), [Times Cited 6]

  3. S. Ichinokura, Y. Nakata, K. Sugawara, Y. Endo, A. Takayama, T. Takahashi, and S. Hasegawa:
    Vortex-induced quantum metallicity in mono-unit-layer superconductor NbSe2 [Times Cited 14]
    Phys. Rev. B 99, 220501(R) (Jun, 2019). (Editor's suggestion) APS　プレスリリース(2019/6/25) PhysOrg

  4. N. V. Denisov, A. V. Matetskiy, A. N. Mihalyuk, S. V. Eremeev, S. Hasegawa, A. V. Zotov, and A. A. Saranin:
    Superconductor-insulator transition in an anisotropic two-dimensional electron gas assisted by one-dimensional Friedel oscillations: (Tl, Au)/Si(100)-c(2 × 2)
    Phys. Rev. B 100, 155412 (Oct, 2019) [Times Cited 7] . 　
  5. Y. Endo, Y. Fukaya, I. Mochizuki, A. Takayama, T. Hyodo, S. Hasegawa:
    Structure of Superconducting Ca-intercalated Bilayer Graphene/SiC studied using Total-Reflection High-Energy Positron Diffraction
    Carbon 157 857-862 (2020). [Times Cited 28]　Elsevier 　
    プレスリリース(2019/11/14) YouTube

  6. S. Ichinokura and S. Hasegawa:
    Chapter 6: Transport Measurement; Carrier Transport
    in Monatomic Two-Dimensional Layers, ed. I. Matsuda, (Elsevier, Jan, 2019). [Times Cited 1]

  7. 高山あかり、長谷川修司:
    超高真空中の“その場”電気伝導測定て゛探る原子層超伝導
    Two-dimensional superconductors, Rashba effect, graphene, electrical conductivity measurements
    材料表面 4 (3), 87-96 （Sep, 2019
    Acc. Mater. Surf. Res. 4 (No.3), 87-96 (Sep, 2019). Web

  8. 一ノ倉聖、長谷川修司:
    超高真空中での電気伝導測定による原子層物質の超伝導の研究
    固体物理 54 (6), 279-290 （Jun, 2019）

  9. 長谷川修司、会誌編集委員会:
    「平成の飛跡」の企画について
    日本物理学会誌 74 (5), 目次 （May, 2019）.

  10. 長谷川修司
    14回目のIPhO日本代表団の派遣
    JPhO News Letters No. 24 （Jul, 2019）.

2018 (12)

  1. Y. Nakata, K. Sugawara, S. Ichinokura, Y. Okada, T. Hitosugi, T. Koretsune, S. Hasegawa, T. Sato, and T. Takahashi:
    Anisotropic Band Splitting in Monolayer NbSe2: Implications for Superconductivity and Charge Density Wave
    npj 2D Materials and Applications 2, 12 (May, 2018). (Open Access) [Times Cited 53] Cited by
  2. T. Hirahara and S. Hasegawa:
    Comment on ``Quantum transport in the surface states of epitaxial Bi(111) thin films''
    Phys. Rev. B 97, 207401 (May, 2018) APS　[Times Cited 5] Cited by

  3. R. Akiyama, K. Sumida, S. Ichinokura, A. Kimura, K. Kokh, O. Tereshchenko, and S. Hasegawa:
    Shbunikov-de Haas oscillations of p and n-type topological insulator (BixSb1-x)2Te3
    J. Phys.: Cond. Matt. 30, 265001 (8pp) (Jun, 2018),     [Times Cited 12]

  4. Y. Endo, S. Ichinokura, R. Akiyama, A. Takayama, K. Sugawara, T. Takahashi, K. Nomura, and S. Hasegawa
    Weak localization in bilayer graphene with Li-intercalation/desorption
    J. Phys.: Cond. Matt., 30, 305701 (7pp) (Jul, 2018) [Times Cited 6] Cited by

  5. Y. Shiomi, K. T. Yamamoto, R. Nakanishi, T. Nakamura, S. Ichinokura, R. Akiyama, S. Hasegawa, and E. Saitoh
    Efficient Edelstein effects in one-atom-layer Tl-Pb compound
    Appl. Phys. Lett., 113, 052401 (Aug, 2018). [Times Cited 5]

  6. T. Nakamura, H. Kim, S. Ichinokura, A. Takayama, A.V. Zotov, A.A. Saranin, Y. Hasegawa, and S. Hasegawa:
    Unconventional Superconductivity in the single-atom-layer alloy Si(111)-√3×√3-(Tl, Pb) [Times Cited 14]
    Phys. Rev. B 98, 134505 (Oct, 2018)　　 　(Editors' Suggestion) APS

    　
  7. H. Toyama, H. Huang, T. Nakamura, L. V. Bondarenko, A. Y. Tupchaya, D. V. Gruznev, A. Takayama, A. V. Zotov, A. A. Saranin, and S. Hasegawa
    Thickness dependence of surface structure and superconductivity in Pb atomic layers
    J. Phys. Soc. Japan 87, 113601 (Oct, 2018) [Times Cited 5] JPSJ

  8. H. Toyama, H. Huang, T. Nakamura, L. V. Bondarenko, A. Y. Tupchaya, D. V. Gruznev, A. Takayama, A. V. Zotov, A. A. Saranin, and S. Hasegawa
    Superconductivity of Pb Ultrathin Film on Ge(111) Surface
    Defect and Diffusion Forum 386, 80-85 (Sep, 2018) DDF [Times Cited 3]
    (Proceedings of The Fourth Asian School-Conference on Physics and Technology of Nanostructured Materials, 23-28, 2018, Vladivostok, Russia)
  9. 長谷川修司:
    学会誌のDuality (巻頭言)
    日本物理学会誌　73 (9), 615（Sep, 2018）.

  10. 長谷川修司:
    表面電子状態 ―タム・ショックレー状態からトポロジカル状態―
    固体物理 53 (11), 565-574 （Nov, 2018）.

  11. 長谷川修司:
    Part II, 第５章　多探針計測法
    in 分子アーキテクトにクス ―単分子技術が拓く新たな機能―
    日本化学会編、化学同人（Dec, 2018） PP. 83-89.

  12. 長谷川修司（インタビュー記事）:
    「学びのトレンド＆入試対策 BOOK 16才の学び方改革」
    ドリコムブック２０１８、 ㈱日本ドリコム編　（Oct, 2018）pp. 66-67.

2017 (9)

  1. S. Ichinokura, L. Bondarenko, A. Tupchaya, D. Gruznev, A. Zotov, A. Saranin, and S. Hasegawa:
    Superconductivity in thallium double atomic layer and transition into an insulating phase intermediated by a quantum metal state
    2D Materials 4, 025020 (Feb, 2017) [Times Cited 30] Cited by

  2. R. Akiyama, Y. Takano, Y. Endo, S. Ichinokura, R. Nakanishi, K. Nomura, and S. Hasegawa:
    Berry phase shift from 2π to π in Bilayer graphene by Li-intercalation and sequential desorption
    Appl. Phys. Lett. 110, 233106 (Jun, 2017) [Times Cited 10] Cited by

  3. T. Hirahara, S. V. Eremeev, T. Shirasawa, Y. Okuyama, T. Kubo, R. Nakanishi, R. Akiyama, A. Takayama, T. Hajiri, S. Ideta, M. Matsunami, K. Sumida, K. Miyamoto, Y. Takagi, K. Tanaka, T. Okuda, T.Yokoyama, S. Kimura, S. Hasegawa, and E. V. Chulkov:
    A large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
    Nano Letters 17, 3493-3500 (May, 2017) Press Release　科学新聞 [Times Cited 160] Cited by

  4. P. Chen, Woei Wu Pai, Y.-H. Chan, A. Takayama, C.-Z. Xu, A. Karn, S. Hasegawa, M. Y. Chou, S.-K. Mo, A.-V. Fedorov, and T.-C. Chiang
    Emergence of charge density waves and a pseudogap in single-layer TiTe2
    Nature Communications 8, 516 (Sep, 2017) (Open Access) [Times Cited 101] Cited by

  5. 高橋隆、菅原克明、一ノ倉聖、高山あかり、長谷川修司:
    ２層グラフェン層間化合物の２次元超伝導
    表面科学. 38, 460-465 (Sep, 2017)

  6. 長谷川修司:
    物理学を例にとって考える｢研究する意味｣ MS
    科学の技法　東京大学「初年次ゼミナール理科」テキスト、
    東京大学教養教育高度化機構初年次教育部門 編, 増田 建・坂口 菊恵 編    　（Mar, 2017東京大学出版会）pp. 214-221.

  7. 長谷川修司:
    学会誌の３つの使い方 (巻頭言)
    日本物理学会誌　72 (10), 697 （Oct, 2017）.

  8. 長谷川修司:
    エネルギーに関する教育と研究
    理科の教育 66 (10), 637-640 (Oct, 2017) （東洋館出版）.

  9. 一ノ倉 聖:
    リンダウ会議に参加して
    日本物理学会誌 72 (9), 681-682 (Sep, 2017)）.

2016 (7)

  1. S. Ichinokura, K. Sugawara, A. Takayama, T. Takahashi, and S. Hasegawa:
    Superconducting Calcium-Intercalated Bilayer Graphene
    ACS Nano 10, 2761-2765 (Jan, 2016) [Times Cited 277] Cited by
    (Open Access) http://pubs.acs.org/doi/abs/10.1021/acsnano.5b07848
    Press Release 日経新聞 Biglobeニュース　ライブドアニュース　マイナビニュース　科学新聞

  2. T. Nakamura, R. Yoshino, R. Hobara,S. Hasegawa, and T. Hirahara:
    Development of a convenient in situ UHV scanning tunneling potentiometry
    system using a tip holder equipped with current-injection probes
    e-J. Surf. Sci. Nanotech. 14, 216-224 (Nov, 2016). [Times Cited 4] Cited by

  3. A. Takayama:
    Anomalous Rashba effect of Bi thin film studied by spin-resolved ARPES
    e-Book: "Modern Technologies for Creating the Thin-film Systems and Coatings", ISBN 978-953-51-5056-5(open access).

  4. 一ノ倉聖, 保原麗, 高山あかり, 長谷川修司, Andrey V. MATETSKIY, Leonid V. BONDARENKO, Alexandra Y. TUPCHAYA, Dimitry V. GRUZNEV, Andrey V. ZOTOV, Alexander A. SARANIN,：
    In situ 電気伝導測定によるRashba 型表面構造（Tl, Pb)/Si(111)の超伝導の観測　
    表面科学 37 (8), 363-368（Aug, 2016).

  5. 長谷川修司：
    役に立つ、役に立たない (巻頭エッセイ)　
    化学 71 (10), 11-12（Oct, 2016).

  6. 長谷川修司：
    学会の国際化 (巻頭言)　
    表面科学 37 (9), 415-415（Sep, 2016).

  7. 長谷川修司：
    研究・開発、この人間的な営み　
    本（講談社、Jan, 2016).

2015 (10)

  1. T. Hirahara, T. Shirai, T. Hajiri, M. Matsunami, K. Tanaka, S. Kimura, S. Hasegawa, and K. Kobayashi:
    Role of Quantum and Surface-State Effects in the Bulk Fermi Level Position of Ultrathin Bi films
    Phys. Rev. Lett.115, 106803 (Sep, 2015) [Times Cited 56] Cited by
    プレスリリース 化学工業日報　日刊工業新聞　科学新聞

  2. A.V. Matetskiy, S. Ichinokura, L.V. Bondarenko, A.Y. Tupchaya, D.V. Gruznev, A.V. Zotov, A.A. Saranin, R. Hobara, A. Takayama, and S. Hasegawa:
    Two-dimensional superconductor with giant Rashba effect: One-atomic-layer Tl-Pb compound on Si(111)
    Phys. Rev. Lett. 115, 147003 (Oct, 2015). [Times Cited 121] Cited by

  3. A.V. Matetskiy, I. A. Kibirev, T. Hirahara, S. Hasegawa, A.V. Zotov, and A.A. Saranin:
    Direct observation of a gap opening in topological interface states of MnSe/Bi2Se3 heterostructure
    Appl. Phys. Lett. 107, 091604 (Sep, 2015 [Times Cited 30] Cited by

  4. T.T. Suzuki, O. Sakai, S. Ichinokura , T. Hirahara, and S. Hasegawa:
    Target element dependent spin?orbit coupling in polarized 4He+ ion scattering
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 354, 163-166 (July, 2015) (online in Dec, 2014) DOI:10.1016/j.nimb.2014.11.055 [Times Cited 5] Cited by

  5. 一ノ倉聖, 平原徹, 酒井治, 長谷川修司, 鈴木拓：
    ビスマス表面におけるスピン依存イオン散乱
    表面科学 36, 408-411 (Aug, 2015).

  6. 長谷川修司：
    表面での電子・スピン輸送研究の最近の展開
    表面科学 36, 112-117 (Mar, 2015).

  7. 長谷川修司：
    物理科学、この30年：表面物理学
    パリティ 30(4), 14-16 (Apr, 2015)　.

  8. 長谷川修司他分担執筆：
    先生、物理っておもしろいんですか？
    パリティ編集委員会編, (丸善, May, 2015)

  9. 長谷川修司：
    物理チャレンジ2015、いよいよ始まる
    大学の物理教育 21(2), 93-93 (Jul, 2015)

  10. 長谷川修司：
    研究者としてうまくやっていくには
    講談社ブルーバックス (Dec, 2015)

2014 (12)

  1. M. Aitani, T. Hirahara, S. Ichinokura, M. Hanaduka, D. Y. Shin, S. Hasegawa:
    In situ Magnetotransport Measurements of Ultrathin Bi films: Evidence for a Surface-Bulk Coherent Transport
    Phys. Rev. Lett. 113, 206802 (Nov, 2014). [Times Cited 46] Cited by

  2. N. Nagamura, R. Hobara, T. Uetake, T. Hirahara, M. Ogawa, T. Okuda, K. He, P. Moras, P. M. Sheverdyaeva, C. Carbone, K. Kobayashi, I. Matsuda, and S. Hasegawa:
    Anisotropic Electronic Conduction in Metal Nanofilms Grown on a One-Dimensional Surface Superstructure,
    Phys. Rev. B 89, 125415 (Mar, 2014) [Times Cited 9] Cited by

  3. T. Shirasawa, M. Sugiki, T. Hirahara, M. Aitani, T. Shirai, S. Hasegawa, and T. Takahashi:
    Structure and transport properties of Cu doped Bi2Se3 films,
    Phys. Rev. B 89, 195311 (May, 2014) [Times Cited 35] Cited by

  4. T. Shirai, T. Shirasawa, T. Hirahara, N. Fukui, T. Takahashi, and S. Hasegawa:
    Structure Determination of Multilayer Silicene Grown on Ag(111) films by Electron Diffraction: Evidence for Ag Segregation at the Surface
    Phys. Rev. B 89, 241403(R) (Jun, 2014) . [Times Cited 98] Cited by
  5. T. Shirai, T. Shirasawa, T. Hirahara, N. Fukui, T. Takahashi, and S. Hasegawa:
    Erratum: Structure Determination of Multilayer Silicene Grown on Ag(111) films by Electron Diffraction: Evidence for Ag Segregation at the Surface
    Phys. Rev. B 90, 039902 (Jul, 2014) . [Times Cited 4]

  6. N. Fukui, R. Hobara, T. Hirahara, Y. Miyatake, H. Mizuno, T. Sasaki, T. Nagamura, and S. Hasegawa:
    In-situ Micro-fabrication and Measurements of Bi2Se3 Ultrathin Films in a Multi-chamber System having Focus Ion Beam, Molecular Beam Epitaxy, and Four-Tip Scanning Tunneling Microscope
    e-J. Surf. Sci. Nanotech. 12, 423-430 (Oct, 2014). [Times Cited 9]

  7. T. Kambe, R. Sakamoto, T. Kusamoto, T. Pal, N. Fukui, K. Hoshiki, T. Shimojima, Z. Wang, T. Hirahara, K. Ishizaka, S. Hasegawa, F. Liu, and H. Nishihara:
    Redox control and high conductivity of nickel bis(dithiolene) complex π-nanosheet, a candidate of the first organic topological insulator
    Journal of The American Chemical Society 136 (41), 14357-14360 (Sep, 2014) [Times Cited 447] Cited by

  8. S. Ichinokura , T. Hirahara, S. Hasegawa, O. Sakai and T.T. Suzuki:
    Electron-spin dependent 4He+ ion scattering on Bi surfaces,
    Radiation Effects and Defects in Solids 169 (12), 1003-1009 (Nov, 2014)
    [Times Cited 4] Cited by


  9. 長谷川修司：
    書評「だれが原子を見たか（江沢洋著）」
    日本物理学会誌 69(2), 117 (Feb, 2014).
    　　　（標記の本の書評）

  10. 長谷川修司：
    表面状態超伝導
    平成25年度 低温センター年報, 2014. MS

  11. 長谷川修司：
    ローラー先生の思い出
    表面科学 35 (10), 550 (Oct, 2014).

  12. 長谷川修司：
    物理チャレンジ10 周年と2022 年国際物理オリンピック日本大会
    大学の物理教育 20, S57-S60 (Nov, 2014). MS

  13. 長谷川修司：
    編集後記
    日本物理学会誌 69(11), 802 (Nov, 2014).

2013(10)

  1. M. Yamada, T. Hirahara, and S. Hasegawa:
    Magnetotransport measurements of a superconducting surface state of In- and Pb-induced structures on Si(111)
    Phys. Rev. Lett. 110, 237001 (Jun, 2013). [Times Cited 105] Cited by

  2. P. De Padova, P. Vogt, A. Resta, J. Avila, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T. Bruhn, T. Hirahara, T. Shirai, S. Hasagawa, M. C. Asensio, and G. Le Lay:
    Evidence of Dirac Fermions in Multilayer Silicene
    Appl. Phys. Lett. 102, 163106 (Apr, 2013). [Times Cited 140] Cited by

  3. T. Tono, T. Hirahara, and S. Hasegawa:
    In situ transport measurements on ultrathin Bi(111) films using a magnetic tip: Possible detection of current-induced spin polarization in the surface states
    New J. Phys. 15, 105018 (Oct, 2013) [Times Cited 9] Cited by

  4. M. Aitani, Y. Sakamoto, T. Hirahara, M. Yamada, H. Miyazaki, M. Matsunami, S. Kimura, and S. Hasegawa:
    Fermi level tuning of topological insulator thin films
    Jpn. J. Appl. Phys. 52, 110112 (Oct, 2013) [Times Cited 17] Cited by

  5. S. Hasegawa:
    "The Image is My Life." MS(PDF)
    in “In Memory of Akira Tonomura: Physicist and Electron Microscopist”
    Eds. K. Fujikawa and Y. A. Ono (World Scientific, 2014), pp. 156-163.

  6. 長谷川修司：
    　「求む異端児」---?
    理学部広報（東京大学、7月号, 2013）

  7. 長谷川修司：
    　究極のナノマテリアル―表面超構造―
    自動車技術　67 (11), 102-103 （Nov 2013）

  8. 長谷川修司：
    100年に一度の大改革？
    大学の物理養育　（教育に関するひと言）　19, 134 (Nov 2013).

  9. 長谷川修司：
    国際化いろいろ
    応用物理学会 薄膜・表面物理分科会 News Letters巻頭言, 2013年9月号.

  10. 長谷川修司：
    問題4.30 「良い論文を書くには？」
    in 問題と解説で学ぶ表面科学（現代表面科学シリーズ６）(共立, Nov 2013). p.177

2012(11)

  1. M. D’Angelo, R. Yukawa, K. Ozawa, S. Yamamoto, T. Hirahara, S. Hasegawa, M.G. Silly, F. Sirotti, and I. Matsuda:
    Hydrogen-induced surface metallization of SrTiO3(001)
    Phys. Rev. Lett. 108, 116802 (Mar, 2012). [Times Cited 52] Cited by

  2. T. Hirahara, N. Fukui, T. Shirasawa, M. Yamada, M. Aitani, H. Miyazaki, M. Matsunami, S. Kimura, T. Takahashi, S. Hasegawa, and K. Kobayashi:
    Atomic and Electronic Structure of Ultrathin Bi(111) Films Grown on Bi2Te3(111) Substrates: Evidence for a Strain-Induced Topological Phase Transition
    Phys. Rev. Lett. 109, 227401 (Nov, 2012). . [Times Cited 114] Cited by

  3. N. Fukui, T. Hirahara, T. Shirasawa, T. Takahashi, K. Kobayashi, and S. Hasegawai:
    Surface Relaxation of Topological Insulators: Influence on the Electronic Structure
    Phys. Rev. B 85, 115426 (Mar, 2012). [Times Cited 38] Cited by

  4. T. Uetake, T. Hirahara, Y. Ueda, N. Nagamura, R. Hobara, and S. Hasegawa:
    Anisotropic conductivity of the Si(111)4×1-In surface: Transport mechanism determined by the temperature dependence
    Phys. Rev. B 86, 035325 (Jul, 2012). [Times Cited 18] Cited by

  5. Y. Fukaya, I. Matsuda, M. Hashimoto, K. Kubo, T. Hirahara, W. H. Choi, H. W. Yeom, S. Hasegawa, A. Kawasuso, and A. Ichimiya:
    Atomic structure of two-dimensional binary surface alloy: Si(111)-√21×√21　superstructure
    Surface Science 606, 919-923 (Feb, 2012). . [Times Cited 6] Cited by

  6. Y. Fukaya, K. Kubo, T. Hirahara, S. Yamazaki, W. H. Choi, H. W. Yeom, A. Kawasuso, S. Hasegawa, and I. Matsuda:
    Atomic and Electronic Structures of Si(111)-√21×√21 Superstructure
    e-Journal of Surface Science and Nanotechnology 10, 310-314 (Jul, 2012). [Times Cited 0]

  7. M. Yamada, T. Hirahara, S. Hasegawa, H. Mizuno, Y. Miyatake, and T. Nagamura:
    Surface Electrical Conductivity Measurement System with Micro-Four-Point Probes at Sub-Kelvin Temperature under High Magnetic Field in Ultrahigh Vacuum
    e-Journal of Surface Science and Nanotechnology 10, 400-405 (Jul, 2012) [Times Cited 22] Cited by

  8. S. Hasegawa, T. Hirahara, Y. Kitaoka, S. Yoshimoto, T. Tono, and T. Ohta:
    Nanometer-Scale Four-Point Probe Resistance Measurements of Individual Nanowires by Four-Tip STM
    pp. 153-165 in  Atomic Scale Interconnection Machines, ed.  Christian Joachim (Springer 2012). [Times Cited 0]

  9. S. Hasegawa:
    Reflection High-Energy Electron Diffraction
    in  Characterization of Materials, ed.  Elton N. Kaufmann (Wiley 2012),
  10. 長谷川修司：
    Au吸着Ｓｉ表面から何を学んだか
    表面科学 33, No. 3, 118-126 (Mar, 2012).

  11. 長谷川修司：
    電子的・電気的特性 （第３章）
    in 表面物性の基礎（現代表面科学シリーズ）　日本表面科学会編集 (共立, Oct 2012) 原稿

2011(9)

  1. S. Yamazaki, Y. Hosomura, I. Matsuda, R. Hobara, T. Eguchi, Y. Hasegawa, and S. Hasegawa:
    Metallic Transport in a Monatomic Layer of In on a Silicon Surface
    Phys. Rev. Lett. 106, 116802 (Mar, 2011). [Times Cited 46]

  2. T. Hirahara, G. Bihlmayer, Y. Sakamoto, M. Yamada, H. Miyazaki, S. Kimura, S. Bl¨uge, and S. Hasegawa:
    Interfacing 2D and 3D topological insulators: Bi(111) bilayer on Bi2Te3
    Phys. Rev. Lett. 107, 166801 (Oct, 2011). 新聞発表 [Times Cited 318]

  3. N. Miyata, R. Hobara, H. Narita, T. Hirahara, S. Hasegawa, and I. Matsuda:
    Development of a surface magneto-transport measurement system with multi-probes and the in situ measurement of Bi nanofilms prepared on Si(111)7×7
    Japanese Journal of Applied Physics 50, 036602 (Mar, 2011). [Times Cited 15]

  4. N. Miyata, H. Narita, M. Ogawa, A. Harasawa, R. Hobara, T. Hirahara, P. Moras, D.Topwal, C.Carbone, S.Hasegawa, and I. Matsuda:
    Enhanced spin relaxation in a quantum metal film by the Rashba-type surface,
    Physical Review B83, 195305 (May, 2011). [Times Cited 12]

  5. Yuki Saisyu, Toru Hirahara, Rei Hobara, and Shuji Hasegawa:
    Manipulation of magnetic anisotropy of Co ultrathin films by substrate engineering
    Journal of Applied Physics 110, 053902 (Sep, 2011). [Times Cited 2]

  6. 長谷川修司、平原徹：
    トポロジカル絶縁体は本当か ―実験から見て―
    表面科学 32, 216-225 (Apr, 2011). [Times Cited 1]

  7. 平原徹：
    トポロジカル絶縁体超薄膜の電子構造
    分子研レターズ 63, 34-35 (Feb, 2011).

  8. 長谷川修司：
    波と量子
    数理科学 No. 576, pp. 34-40 (Jun, 2011).

  9. 長谷川修司、興治文子：
    2010年度公開講座「超伝導からみる科学技術の最先端」報告
    大学の物理教育 17(1), 40-41 (Mar, 2011) .

2010 (11)

  1. T. Shibasaki, N. Nagamura, T. Hirahara, .H. Okino, S. Yamazaki, W. Lee, H. Shim, R. Hobara, I. Matsuda, G. . S. Lee, and S. Hasegawa:
    Phase transition temperatures determined by different experimental methods: Si(111)4x1-In surface with defects,
    Phys. Rev. B81, 035314 (Jan, 2010). [Times Cited 22] Cited by

  2. S. Hasegawa
    Quasi-One Dimensional Metals on Semiconductor Surfaces with Defects,
    J. Phys.: Cond. Matter 22, 084026 (8pp) (Feb, 2010). [Times Cited 19] Cited by


  3. T .Hirahara, Y. Sakamoto, Y. Saisyu, H. Miyazaki, S. Kimura, T. Okuda, I. Matsuda, S. Murakami, and S. Hasegawa:
    Topological metal at the surface of an ultrathin Bi1-xSbx alloy film,
    Phys. Rev. B81, 165422 (Apr, 2010). [Times Cited 45] Cited by

  4. Y. Sakamoto, T. Hirahara, H. Miyazaki, S. Kimura, and S. Hasegawa:
    Spectroscopic evidence of a topological quantum phase transition in ultrathin Bi2Se3 films,
    Phys. Rev. B81, 165432 (Apr, 2010). [Times Cited 101] Cited by

  5. H. Morikawa, K. S. Kim, H. W. Yeom, Y. Kitaoka, T. Hirahara, and S. Hasegawa:
    Conductance transition and interwire ordering of Pb nanowires on Si(557),
    Phys. Rev. B 82, 045423 (Jul, 2010). [Times Cited 5] Cited by

  6. Y. Niinuma, Y. Saisyu, T. Hirahara, R. Hobara, S. Hasegawa, H. Mizuno, and T. Nagamura:
    Development of an UHV-SMOKE system using permanent magnets
    e-Journal of Surface Science and Nanotechnology 8, 298-302 (June, 2010). . [Times Cited 0] Cited by

  7. T. Hirahara, Y. Sakamoto, Y. Takeichi, H. Miyazaki, S. Kimura, I. Matsuda, A. Kakizaki, S. Hasegawa,
    Anomalous transport in an n-type topological insulator ultrathin Bi2Se3 film,
    Phys. Rev. B82, 155309 (Oct, 2010). [Times Cited 44] Cited by

  8. I. Matsuda, K. Kubo, T. Hirahara, S. Yamazaki, W. H. Choi, H. W. Yeom, H. Narita, Y. Fukaya, M. Hashimoto, A. Kawasuso, S. Hasegawa, and K. Kobayashi:
    Electron compound nature in a surface atomic layer of two-dimensional hexagonal lattice,
    Phys. Rev. B 82, 165330 (Nov, 2010). [Times Cited 9] Cited by

  9. 村上修一、平原徹、松田巌：
    トポロジカル絶縁体の物理
    日本物理学会誌 65(11), 840-848 (Nov, 2010)
  10. 武市泰男、何珂、奥田太一、平原徹、柿崎明人、松田巌：
    ラシュバ分裂した表面状態との混成により誘起された金属量子井戸状態のスピン分裂
    表面科学 31(9), 493-499 (Sep, 2010)

  11. 長谷川修司訳、チャールズ・デイ著：
    ナノスケール２次元磁束格子の融解を観る
    パリティ 25(8), 39-41 (Oct, 2010)

  12. 物理チャレンジ・オリンピック日本委員会　編 (分担執筆)
    オリンピック問題で学ぶ世界水準の物理入門 (丸善、Apr. 2010)

2009 (12)

  1. M. D’angelo, K. Takase, T. Hirahara, S. Hasegawa, and I. Matsuda:
    Conductivity of the Si(111)7×7 dangling-bond state
    Phys. Rev. B 79, 035318 (Jan, 2009). [Times Cited 27] Cited by

  2. S. Yamazaki, I. Matsuda, H. Okino, H. Morikawa, and S. Hasegawa:
    Localization and Hopping Conduction at Glass and Crystal Phases of Monatomic Au Layers on Silicon Surface
    Phys. Rev. B 79, 085317 (Feb, 2009). [Times Cited 5] Cited by

  3. Y. Kitaoka, T. Tono, S. Yoshimoto, T. Hirahara, S. Hasegawa, and T. Ohba:
    Direct detection of grain boundary scattering in damascene Cu wires by nanometer-scale four-point probe resistance measurements,
    Appl. Phys. Lett. 95, 052110 (Aug, 2009). [Times Cited 50] Cited by

  4. T. Hirahara, T. Komorida, Y. Gu, F. Nakamura, H. Izuchi, H. Morikawa, and S. Hasegawa:
    Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping,
    Phys. Rev. B 80, 235419 (Dec, 2009). [Times Cited 13] Cited by

  5. Y. Kitaoka, S. Yoshimoto, T. Hirahara, S. Hasegawa, T. Ohba:
    Nanometer-scale Four-Point Probe Resistance Measurements of Cu Wires Using Carbon Nanotube Tips
    Advanced Metallization Conference 2009, Eds. M. Naik, R. Shaviv, T. Yoda, and K. Ueno, Mat. Res. Soc., pp. 295-299.


  6. 平原徹、松田巌、山崎詩郎、長谷川修司:
    ビスマス量子薄膜における表面状態による電気伝導
    表面科学 30, 374-379 (Jul, 2009).

  7. 平原徹:
    ビスマス超薄膜の電子構造：Rashba効果と量子サイズ効果及びその協奏

    真空　52, 582-588 (Nov, 2009).


  8. 長谷川修司:
    マルチプローブ計測（第13章）
    「走査プローブ顕微鏡ー正しい実験とデータ解析のために必要なことー」（重川秀実・吉村雅満・河津章編）
    実験物理科学シリーズ（第６巻）, 共立出版 (March, 2008).

  9. 長谷川修司:
    オリンピックへの道 ～世界に羽ばたく科学のハンカチ王子たちは中学から～
    教育フォーラム 中学校数学理科保健体育、2009冬号　pp. 22-23 (大日本図書, Jan, 2009).

  10. アンドリュー・クレランド　（長谷川修司 訳）
    ナノスケールの振動板を使って量子現象をみる
    パリティ 24(7), pp. 37-39 (丸善, July, 2009).

  11. 長谷川修司：
    物理はおもしろくないが、研究はおもしろい
    パリティ 24(9), pp. 48-48 (丸善, Sep, 2009).

  12. 長谷川修司：
    振動・波動（講談社基礎物理学シリーズ２）
    (講談社サイエンティフィック, Sep, 2009).

2008 (17)

  1. K. He, T. Hirahara, T. Okuda, S. Hasegawa, A. Kakizaki, and I. Matsuda:
    Spin-polarization of quantum well states in Ag films induced by Rashba effect at surface
    Physical Review Letters, 101, 107604 (Sep, 2008). [Times Cited 49] Cited by

  2. H. Morikawa, I. Matsuda, and S. Hasegawa:
    Absence of Chrage-Density Waves on the Dense Pb/Ge(111)-√3×√3 Surface,
    Physical Review B 77, 193310 (May 2008). [Times Cited 14] Cited by

  3. T. Hirahara, T. Komorida, A. Sato, G. Bihlmayer, E. V. Chulkov, K. He, I. Matsuda, and S. Hasegawa:
    Manipulating quantum-well states by surface alloying: Pb on ultrathin Ag films,
    Physical Review B 78, 035408 (Jul 2008). [Times Cited 13] Cited by

  4. C. Liu, I. Matsuda, S. Yoshimoto, T. Kanagawa, and S. Hasegawa:
    Electronic Transport of Au-Adsorbed Si(111)-√3×√3-Ag Surface: Metallic Conduction and Localization
    Physical Review B 78, 035326 (Jul, 2008) [Times Cited 15] Cited by

  5. N. Miyata, K. Horikoshi, T. Hirahara, S. Hasegawa, C. M. Wei, and I. Matsuda:
    Electron Transport Property of Quantum-Well States in Ultrathin Pb (111) Films
    Phys. Rev. B 78, 245405 (Dec, 2008).[Times Cited 24] Cited by

  6. T Hirahara, K. Miyamoto, A. Kimura, Y. Niinuma, G. Bihlmayer, E. V. Chulkov, T. Nagao, I. Matsuda, S. Qiao, K. Shimada, H. Namatame, M. Taniguchi, and S. Hasegawa:
    Origin of the surface-state band-splitting in ultrathin Bi Flms: From a Rashba effect to a parity effect,
    New Journal of Physics 10, 083038 (Aug 2008). [Times Cited 58] Cited by

  7. Y. Kakefuda, K. Narita, T. Komeda, S. Yoshimoto, and S. Hasegawa:
    Synthesis and conductance measurement of periodic arrays of gold nanoparticles
    Applied Physics Letters 93, 163103 (2008). [Times Cited 13] Cited by

  8. C. Liu, I. Matsuda, T. Hirahara, S. Hasegawa, J. Okabayashi, S. Toyoda, and M. Oshima:
    Band-bending inhomogeneity of Au adsorbed Si(111)-√3×√3-Ag evaluated with Si 2p core-level spectra
    Surface Science 602, 3316 (2008). [Times Cited 3] Cited by

  9. Y. Nakayama, I. Matsuda, S. Hasegawa, and M. Ichikawa:
    Growth, Quantum confinement and Transport mechanisms of Ge nanodot arrays formed on a SiO2 monolayer (Review)
    e-Journal of Surface Science and Nanotechnology 6, 191-201 (Aug, 2008). [Times Cited 2] Cited by

  10. 長谷川修司:
    半導体結晶表面上の擬１次元金属
    真空 51(7), 453-459 (July, 2008). Cited by

  11. 長谷川修司:
    見えないものをみる　－ナノワールドと量子力学－
    ＵＴフィジックス・シリーズ, 東京大学出版会 (Oct 2008).

  12. 保原麗、長谷川修司:
    ４探針ＳＴＭ装置
    応用物理学会薄膜表面物理分科会News Letter No. 133, pp. 23-27 (Sep 2008)

  13. 長谷川修司:
    e-Journal の現状と将来 -表面科学講演大会特別講演より-
    表面科学 29, 437-445 (Jul 2008).

  14. 長谷川修司:
    国際物理オリンピック2008ベトナム大会報告
    応用物理 77(11), 1364-1354 (Nov 2008)

  15. 長谷川修司:
    物理チャレンジ2008 全国大会実験コンテスト
    大学の物理教育 (Nov 2008) 14(3), 139-143 (Nov 2008) ,

  16. 長谷川修司:
    全国物理コンテスト「物理チャレンジ」 ～出でよ、物理のハンカチ王子～
    教育フォーラム 中学校数学理科保健体育、2008春号　pp. 22-23 (大日本図書, Apl, 2008).

  17. 長谷川修司:
    国際物理オリンピック ～世界に羽ばたく物理のハンカチ王子たち～
    教育フォーラム 中学校数学理科保健体育、2008秋号　pp. 22-23 (大日本図書, Sep, 2008)

2007 (24)

  1. S. Yoshimoto, Y. Murata, K. Kubo, K. Tomita, K. Motoyoshi, T. Kimura, H. Okino, R. Hobara, I. Matsuda, S. Honda, M. Katayama, and S. Hasegawa:
    Four-Point Probe Resistance Measurements Using PtIr-Coated Carbon Nanotube Tips
    Nano Letters 7, 956 (May, 2007). 朝日新聞で報道20070518 [Times Cited 80] Cited by

  2. I. Matsuda, C. Liu, T. Hirahara, M. Ueno,T. Tanikawa, T. Kanagawa, R.Hobara, S. Yamazaki, S. Hasegawa, and K. Kobayashi:
    Electron-phonon interaction and localization of surface-state carriers in a metallic monolayer
    Physical Review Letters 99, 146805 (Oct 2007). [Times Cited 35] Cited by

  3. H. Kakuta, T. Hirahara, I. Matsuda, T. Nagao, S. Hasegawa, N. Ueno, and K. Sakamoto:
    Electronic structures of the highest occupied molecular orbital bands of a pentacene ultrathin film
    Physical Review Letters 98, 247601 (2007). [Times Cited 148] Cited by

  4. Y. Nakayama, S. Yamazaki, H. Okino, T. Hirahara, I. Matsuda, S. Hasegawa, and M. Ichikawa:
    Electrical conduction of Ge nanodot arrays formed on an oxidized Si surface,
    Applied Physcs Letters 91,123104 Sep 2007). [Times Cited 10] Cited by

  5. T. Hirahara, I. Matsuda, S. Yamazaki, N. Miyata, T. Nagao, and S. Hasegawa:
    Large surface-state conductivity in ultrathin Bi films
    Appl. Phys. Lett. 91, 202106 (Nov 2007). [Times Cited 82] Cited by

  6. H. Okino, I. Matsuda, S. Yamazaki, R. Hobara, and S. Hasegawa:
    Transport in Defective Quasi-One-Dimensional Arrays of Chains of Gold Atoms on a Vicinal Silicon Surfaces
    Physical Review B 76, 035424 (Jul, 2007). [Times Cited 29] Cited by

  7. T. Hirahara, T. Nagao, I. Matsuda, G. Bihlmayer, E. V. Chulkov, Yu. M. Koroteev, and S. Hasegawa:
    Quantum-well states in ultrathin Bi films from angle-resolved photoemission spectroscopy and first-principles calculations study
    Physical Review B 75, 035422 (Jan, 2007). [Times Cited 91] Cited by

  8. T. Hirahara, K. Miyamoto, I. Matsuda, T. Kadono, A. Kimura, T. Nagao, G. Bihlmayer, E. V. Chulkov, S. Qiao, K. Shimada, H. Namatame, M. Taniguchi, and S. Hasegawa:
    Direct Observation of Spin Splitting in Bismuth Surface States
    Physical Review B 76,153305 (Oct 2007). [Times Cited 140] Cited by

  9. H. Okino, I. Matsuda, R. Hobara, S. Hasegawa, Y. H. Kim and G. S. Lee:
    Influence of Defects on Transport in Quasi-One-Dimensional Metallic Atomic-Chain Arrays on Silicon Surfaces
    Physical Review B 76, 195418 (Nov 2007). [Times Cited 14] Cited by

  10. H. Konishi, Y. Murata, W. Wongwiriyapan, M. Kishida, K. Tomita, K. Motoyoshi, S. Honda, and M. Katayama, S. Yoshimoto, K. Kubo, R. Hobara, I. Matsuda, and S. Hasegawa, M. Yoshimura, J.-G. Lee and H. Mori:
    High-yield synthesis of conductive carbon nanotube tips for multiprobe scanning tunneling microscope
    Review of Scientific Instruments 78, 013703 (Jan. 2007). [Times Cited 18] Cited by

  11. R. Hobara, N. Nagamura, S. Hasegawa, I. Matsuda, Y. Yamamoto, K. Ishikawa, and T. Nagamura:
    Variable-Temperature Independently-Driven Four-Tip Scanning Tunneling Microscope
    Review of Scientific Instruments 78, 053705 (May 2007). [Times Cited 41] Cited by

  12. Y. Nakayama, K. Takase, T. Hirahara, S. Hasegawa, T. Okuda, A. Harasawa, I. Matsuda, Y. Nakamura, and M. Ichikawa:
    Quantum-Size Effect in Uniform Ge-Sn Alloy Nanodots Observed by Photoemission Spectroscopy
    Japanese Journal of Applied Physics 46, L1176-L1178 (Nov 2007). . [Times Cited 6] Cited by

  13. I. Matsuda and S. Hasegawa:
    Fermiology and transport in metallic monatomic layers on semiconductor surfaces (Review)
    Journal of Physics: Condensed Matter 19, 355007 (26pp) (Aug 2007). [Times Cited 24] Cited by

  14. S. Hasegawa:
    Surface One-Dimensional Structures (Review)
    Chinese Journal of Physics 45, 385-411 (Aug 2007). [Times Cited 5] Cited by

  15. R. Hobara, S. Yoshimoto, S. Hasegawa, and K. Sakamoto:
    Dynamic electrochemical-etching technique for tungsten tips suitable for multi-tip scanning tunneling microscopes
    e-Journal of Surface Science and Nanotechnology 5, 94-98 (April 2007). [Times Cited 33] Cited by

  16. 松田巌、保原麗、長谷川修司：
    単原子ステップを通過する表面自由電子
    日本物理学会誌 62, 91-98 (Feb, 2007). (16MB)

  17. 劉燦華、松田巌、長谷川修司：
    Si(111)-√3×√3-Ag 表面上における原子レベルでの金クラスターの自己組織化
    PF News 25 (No. 3), 17-21 (Nov, 2007). (14MB)

  18. 長谷川修司、吉本真也、保原麗：
    ４探針ＳＴＭで何ができるのか
    固体物理 42 (No. 11), 757-764 (Nov, 2007). (9MB)

  19. 小間篤、青野正和、石橋幸治、塚田捷、常行真司、長谷川修司、八木克道、吉信淳(編）：
    表面物性工学ハンドブック（第２版）、丸善 (Jan, 2007).

  20. 毛塚博史、江尻有郷、長谷川修司：
    物理オリンピックへの道　-物理チャレンジ2005から第37回国際物理オリンピックへの派遣まで-
    応用物理　76 (1), 71-72 (Jan, 2007).

  21. 勝本信吾、長谷川修司（分担執筆）：
    ナノテクのための物理入門　（第12章 ナノスケール系の電子状態と電気伝導）、菅原康弘、粉川良平編（共立、2007年4月）

  22. 長谷川修司：
    「高校生よ、世界に挑もう」 -国際物理オリンピックを例にして-　
    下野教育、特集「大志に生きる」、No. 726, pp. 17-20 (Nov 2007）.

  23. S. Hasegawa :
    Multi-Probe Scanning Tunneling Microscopy (Chap. II.7. in Vol. 1)
    in Scanning Probe Microscopy -Electrical and Electromechanical Phenimena at the Nanoscale-,
    Eds. S. Kalinin and A. Gruverman (Springer, 2007) ISBN 978-0-387-28667-9.

  24. Shuji Hasegawa, Masatoshi Namiki, and Kazuo Kitahara:
    Japan Has Joined the IPhO
    Bulletin of The Association of Asia Pacific Physical Societies 17 (No. 3), 23-27 (Jun 2007).


2006 (16)

  1. C. Liu, I. Matsuda, R. Hobara, and S. Hasegawa:
    Interaction between the adatoms-induced localized state and the quasi-two-dimensional electron gas
    Phys. Rev. Lett. 96, 036803 (15 Jan, 2006). [Times Cited 43] Cited by

  2. N. Nagamura, I. Matsuda, N. Miyata, T. Hirahara, S. Hasegawa, and T. Uchihashi:
    Quasi-One-Dimensional Quantized States in an Epitaxial Ag Film on a One-Dimensional Surface Superstructure
    Phys. Rev. Lett. 96, 256801 (June, 2006). [Times Cited 29] Cited by

  3. T. Hirahara, T. Nagao, I. Matsuda, G. Bihlmayer, E. V. Chulkov, Yu. M. Koroteev, P. M. Echenique, M. Saito, and S. Hasegawa
    Role of Spin-Orbit Coupling and Hybridization Effects in the Electronic Structure of Ultrathin Bi Films
    Phys. Rev. Lett. 97, 146803 (October, 2006). [Times Cited 385] Cited by

  4. Yasuo Nakayama, Iwao Matsuda, Shuji Hasegawa, and Masakazu Ichikawa:
    Quantum regulation of Ge nanodot state by controlling barrier of the interface layer
    Applied Physics Letters 88, 253102 (June, 2006). [Times Cited 20] Cited by

  5. Alexander Konchenko,, Iwao Matsuda, Shuji Hasegawa,Yoshiaki Nakamura, and Masakazu Ichikawa:
    Quantum Confinement Observed in Ge nanodots on an oxidized Si surface
    Phys. Rev. B 73, 113311(15 March, 2006). [Times Cited 35] Cited by

  6. T. Hirahara, I. Matsuda, R. Hobara, S. Yoshimoto, and S. Hasegawa:
    Direct measurement of the Hall effect in a free-electron-like surface state
    Phys. Rev. B 73, 235332 (June, 2006). [Times Cited 12] Cited by

  7. Canhua Liu, Iwao Matsuda, Marie D'angelo, and Shuji Hasegawa:
    Self-Assembly of Two-Dimensional Nanoclusters: From Surface Molecules to Surface Superstructure,
    Phys. Rev. B 74, 235420 (Dec, 2006). [Times Cited 14] Cited by

  8. I. Matsuda, T. Hirahara, M. Ueno, R. Hobaram and S. Hasegawa
    Electrical Conduction through a Monatomic Step
    Journal de Physique IV 132, 57 (April 2006). [Times Cited 1] Cited by

  9. H. Konishi, S. Honda, M. Kishida, Y. Murata, T. Yasuda, D. Maeda, K. Tomita, K. Motoyoshi, S. Yoshimoto, R. Hobara, I. Matsuda, J.-G. Lee, H. Mori, K. Oura, S. Hasegawa, and M. Katayama:
    Synthesis of Metal-Alloy Nanowires toward Functional Scanning Probe Microscope,
    Japanese Journal of Applied Physics 45, 3690-3692 (April, 2006). [Times Cited 6] Cited by

  10. S. Hasegawa:
    Multiprobe SPM (Chap. 12),
    Characterization of Semiconducting Materials     (Chap. 18), [Times Cited 0]
    in Roadmap of Scanning Probe Microscopy, ed. S. Morita, (Springer, Nov. 2007)

  11. 松田巌、上野将司、平原徹、保原麗、守川春雲、劉燦華、長谷川修司
    結晶表面上単原子ステップの電気抵抗
    表面科学 27, 182-187 (March 2006).

  12. 長谷川修司
    物理チャレンジから物理オリンピックへ
    大学の物理教育　12 (2), 50-51 (July, 2006).

  13. 中山泰生，松田巌，長谷川修司，市川昌和:
    極薄Si酸化物上Geナノドットの界面構造と閉じ込めポテンシャル
    表面科学　27 (2), 523-529 (September, 2006).

  14. 劉燦華、松田巌、保原麗、長谷川修司:
    吸着原子誘起の局在状態と表面自由電子ガスとの相互作用
    表面科学　27 (12), 702-707 (december, 2006).

  15. 長谷川修司：
    マルチ探針走査型トンネル顕微鏡の開発と表面電子輸送
    真空　49 (11), 642-648 (November, 2006).

  16. 長谷川修司：
    国際物理オリンピック2006
    パリティ　21 (12), 52-57 (December, 2006).

2005 (18)

  1. C. Liu, S. Yamazaki, R. Hobara, I. Matsuda, and S. Hasegawa
    Atomic Scale Observation of a Two-Dimensional Liquid-Solid Phase Transition on the Si(111)-√3×√3-Ag Surface
    Physical Review B 71, 041310(R) (2005). [Times Cited 15] Cited by

  2. I. Matsuda,. T. Hirahara, M. Konishi, C. Liu, H. Morikawa, M. D'angelo, S. Hasegawa, T. Okuda, and T. Kinoshita:
    Evolution of Fermi surface by electron doping into a free-electron-like surface state,
    Physical Review B 71, 235315 (June, 2005). [Times Cited 50] Cited by

  3. A. A. Saranin, A. V. Zotov, I. A. Kuyanov, V. G. Kotlyar, M. Kishida, Y. Murata, H. Okado, I. Matsuda, H. Morikawa, N. Miyata, S. Hasegawa, M. Katayama, and K. Oura:
    Long-periodic modulations in the linear chains of Tl atoms on Si(100)
    Physical Review B 71, 165307 (April 2005) . [Times Cited 9] Cited by

  4. Hiroyuki Okino,. Iwao Matsuda, Rei Hobara, Yoshikazu Hosomura, Shuji Hasegawa, and P. A. Bennett:
    In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)
    Applied Physics Letters 86, 233108 (June 2005). [Times Cited 60] Cited by

  5. Yuya Murata, Shinya Yoshimoto, Masaru Kishida, Daisuke Maeda, Tatsuro Yasuda, Takashi Ikuno, Shin-ichi Honda, Hideaki Okad0, Rei Hobara, Iwao Matsuda, Shuji Hasegawa, Kenjiro Oura, and Mitsuhiro Katayama:
    Exploiting Metal Coating of Carbon Nanotubes for Scanning Tunneling Microscopy Probes
    Japanese Jourmal of Applied Physics 44, 5336-5338 (July 2005). [Times Cited 15] Cited by

  6. S. Yoshimoto, Y. Murata, R. Hobara, I. Matsuda, M. Kishida, H. Konishi, T. Ikuno, D. Maeda, T. Yasuda, S. Honda, H. Okado, K. Oura, M. Katayama, and S. Hasegawa:
    Electrical Characterization of Metal-Coated Carbon-Nanotube Tips
    Japanese Journal of Applied Physics 44, L1563-L1566 (Dec, 2005). [Times Cited 18]
    Cited by

  7. M. D'angelo, M. Konishi, I. Matsuda, C. Liu, S. Hasegawa, T. Okuda, and T. Kinoshita,
    Alkali metal-induced Si(111)√21x√21 structure: the Na case,
    Surface Science 590, 162-172 (Oct. 2005). [Times Cited 20] Cited by

  8. T. Nagao, S. Yaginuma, M. Saito, T. Kogure, T. Ohno, S. Hasegawa, and T. Sakurai:
    Strong Lateral Growth and Crystallization via Two-dimensional Allotropic Transformation of Semi-metal Bi Film
    Surface Science 590, L247-252 (Sep. 2005). [Times Cited 57] Cited by

  9. C. Liu, I. Matsuda, and S. Hasegawa:
    Scanning tunnelling microscopy observations observation at initial stage of Cs adsorption on Si(111)-√3x√3-Ag surface,
    Surface and Interface Analysis 37, 101-105 (2005). [Times Cited 2] Cited by

  10. M. Konishi, I. Matsuda, C. Liu, H. Morikawa, and S. Hasegawa:
    √21x√21 phase formed by Na adsorption on Si(111)√3x√3-Ag surface and its electronic structure,
    e-Journal of Surface Science and Nanotechnology 3, 107-112 (March, 2005). [Times Cited 12] Cited by

  11. N. Miyata, I. Matsuda,. M. D'angelo, H. Morikawa, T. Hirahara, and S. Hasegawa:
    STM observation of the Si(111)-c(12×2)-Ag surface
    e-Journal of Surface Science and Nanotechnology 3, 151-155 (May, 2005). [Times Cited 3] Cited by

  12. Masaru Kishida, Hirofumi Konishi, Yuya Murata, Daisuke Maeda, Tatsuro
    Yasuda, Takashi Ikuno, Shin-ichi Honda, Mitsuhiro Katayama, Shinya Yoshimoto, Rei Hobara, Iwao Matsuda, and Shuji Hasegawa:
    Coating Carbon Nanotubes with Compound Ultrathin Film: A Novel Route to Functional SPM tips.
    e-Journal of Surface Science and Nanotechnology 3, 417-420 (Dec, 2005). [Times Cited 3] Cited by

  13. Hiroyuki Okino, Iwao Matsuda, Rei Hobara, Yoshikazu Hosomura, Shuji Hasegawa, and P. A. Bennett:
    Resistance measurements of metallic silicide nanowires on a Si substrate with a four-tip scanning tunneling microscope
    e-Journal of Surface Science and Nanotechnology 3, 362-366 (Dec, 2005). [Times Cited 2] Cited by

  14. Shiro Yamazaki, Iwao Matsuda, Hiroyuki Okino, Harumo Morikawa, and Shuji Hasegawa:
    Electrical Conduction on Various Au/Si(111) Surface Superstructures
    e-Journal of Surface Science and Nanotechnology 3, 497-502 (Dec, 2005). [Times Cited 9] Cited by

  15. 山崎詩郎、松田巌、沖野泰之、守川春雲、長谷川修司:
    Au/Si(111)表面超構造のガラス・結晶化転移での電気伝導の研究
    表面科学 26, 468-473 (2005). [Times Cited 1] Cited by

  16. 長尾忠昭、柳沼晋、J. T. Sadowski、斉藤峯雄、藤川安仁、大野隆央、長谷川修司、櫻井利夫:
    シリコン表面上の半金属Bi超薄膜の同素変態
    表面科学 26, 344-350 (June, 2005). [Times Cited 3] Cited by

  17. 長谷川修司（分担執筆）：
    物理学大事典（第11.8節 表面）（鈴木増雄、荒船次郎、和達三樹編集、朝倉書店, 2005）.

  18. 長谷川修司（分担執筆）：
    ＳＰＭロードマップ２００５　（森田清三編集、丸善 Dec, 2005）.

2004 (16)

  1. I. Matsuda, M. Ueno, T. Hirahara, R. Hobara, H. Morikawa, and S. Hasegawa,
    Electrical Resistance of a Monatomic Step on a Crystal Surface,
    Physical Review Letters 93, 236801 (Dec, 2004). [Times Cited 70] Cited by

  2. T. Tanikawa, I. Matsuda, T. Kanagawa, and S. Hasegawa,
    Surface-state electrical conductivity at a metal-insulator transition on silicon,
    Physical Review Letters 93, 016801 (2004). [Times Cited 133] Cited by

  3. T. Nagao, J. T. Sadowski, M. Saito, S. Yaginuma, Y. Fujikawa, T. Kogure, T. Ohno, Y. Hasegawa, S. Hasegawa, and T. Sakurai:
    Nanofilm Allotrope and Phase Transformation of Ultrathin Bi Film on Si(111)-7×7,
    Physical Review Letters 93, 105501 (Sep, 2004). [Times Cited 524] Cited by

  4. H. Okino, R. Hobara, I. Matsuda, T. Kanagawa, and S. Hasegawa,
    Nonmetallic transport of a quasi-one-dimensional metallic Si(557)-Au surface,
    Physical Review B 70, 113404 (2004).[Times Cited 33] Cited by

  5. H. Morikawa, I. Matsuda, and S. Hasegawa
    Direct observation of soliton dynamics in charge density waves on a quasi-one-dimensional metallic surface,
    Physical Review B 70, 085412 (2004). [Times Cited 39] Cited by

  6. T. Hirahara, I. Matsuda, M. Ueno, and S. Hasegawa,
    The effective mass of a free-electron-like surface state of the Si(111)√3×√3-Ag investigated by photoemission and scanning tunneling spectroscopies,
    Surface Science 563, 191-198 (2004). [Times Cited 44] Cited by

  7. R. Hobara, S. Yoshimoto, T. Ikuno, M. Katayama, N. Yamauchi, W. Wongwiriyapan, S. Honda, I. Matsuda, S. Hasegawa, and K. Oura:
    Electronic Transport in Multiwalled Carbon Nanotubes Contacted with Patterned Electrodes
    Japanese Journal of Applied Physics 43, L1081-L1084 (2004). [Times Cited 40] Cited by

  8. T. Ikuno, M. Katayama, N. Yamauchi, W. Wongwiriyapan, S. Honda, K. Oura, R. Hobara, and S. Hasegawa,
    Selective Growth of Straight Carbon Nanotubes by Low-Pressure Thermal Chemical Vapor Deposition,
    Japanese Journal of Applied Physics, 43, 860-863 (February, 2004). [Times Cited 17] Cited by

  9. T. Hirahara, I. Matsuda, and S. Hasegawa,
    Photoemission Structure Factor Effect for Fermi Rings of the Si(111)√3 × √3-Ag Surface,
    e-Journal of Surface Science and Nanotechnology, 2, 141-145 (2004, April). [Times Cited 14]

  10. F. Shimokoshi, I. Matsuda, S. Hasegawa, and S. Ino,
    Successive Phase Transitions Induced by Ca and Sr Adsorptions on a Si(111) surface
    e-Journal of Surface Science and Nanotechnology 2, 178-185 (2004). [Times Cited 7]

  11. I. Matsuda, T. Tanikawa, S. Hasegawa, H. W. Yeom, K. Tono, and T. Ohta,
    Quantum-Well States in Ultra-Thin Metal Films on Semiconductor Surfaces,
    e-Journal of Surface Science and Nanotechnology 2, 169-177 (2004, May) . [Times Cited 5]

  12. 日本表面科学会編；長谷川修司（分担執筆）
    ナノテクノロジーのための走査電子顕微鏡、（表面分析技術選書）
    （第5.2.節 プローブ顕微鏡との複合化）

  13. 守川春雲、松田巌、長谷川修司：
    シリコン表面上での電荷密度波の格子整合効果とソリトンダイナミクス
    表面科学、25, 407-415 (2004).     [Times Cited 0]

  14. 坂本克好，名取晃子，河野勝泰，長谷川修司:
    Ag 探針を用いた表面エレクトロマイグレーションのSEM 観察
    表面科学、25, 534-540 (Sep, 2004). [Times Cited 0]

  15. 長谷川修司（分担執筆）：
    新訂版 表面科学の基礎と応用（日本表面科学会編、NTS, 2004 June）.

  16. 松田巌:
    注目の論文「金属ー単分子ー金属接合の構造および電子状態の直接観察」 
    化学　59(No.10), 63 (2004).

2003 (14)

  1. T. Kanagawa, R. Hobara, I. Matsuda, T. Tanikawa, A. Natori, and S. Hasegawa,
    Anisotropy in conductance of a quasi-one-dimensional metallic surface state measured by square micro-four-point probe method,
    Physical Review Letters 91(3), 036805 (2003). [Times Cited 157] Cited by

  2. I. Matsuda, H. Morikawa, C.-H. Liu, S. Ohuchi, S. Hasegawa, T. Okuda, T. Kinoshita, C. Ottaviani, A. Cricenti, M. D'angelo, P. Soukiassian, and G. LeLay:
    Electronic evidence of symmetry breakdown in surface structure    ,
    Physical Review B 68, 085407 (August, 2003). [Times Cited 53] Cited by

  3. T . Tanikawa , K . Yoo, I . Matsuda, and S. Hasegawa,
    Nonmetallic Transport Property of the Si(111) 7×7 Surface,
    Physical Review B 68, 113303 (2003, September). [Times Cited 33] Cited by

  4. S. Hasegawa, I. Shiraki, F. Tanabe, R. Hobara, T. Kanagawa, T. Tanikawa, I. Matsuda, C. L. Petersen, T. M. Hansen, P. Boggild, F. Grey:
    Electrical conduction through surface superstructures measured by microscopic four-point probes,
    Surface Review and Letters 6, 963-980 (2003). [Times Cited 62] Cited by

  5. T. M. Hansen, K. Stokbro, O. Hansen, T. Hassenkam, I. Shiraki, S. Hasegawa, P. Boggild,
    Resolution enhancement of scanning four-point probe measurement on 2D systems,
    Review of Scientific Instruments, 74(8), 3701-3708 (August, 2003). [Times Cited 22] Cited by

  6. C. Liu, I. Matsuda, H. Morikawa, H. Okino, T. Okuda, T. Kinoshita, and S. Hasegawa,
    Si(111)-√21×√21-(Ag+Cs) surface studied by scanning tunneling microscopy and angle-resolved photoemission spectroscopy,
    Japanese Journal of Applied Physics, 42, Part 1, pp. 4659-4662 (2003, July). [Times Cited 15] Cited by

  7. M. Ueno, I. Matsuda, C. Liu, and S. Hasegawa,
    Step edges as reservoirs of adatom gas on a surface,
    Japanese Journal of Applied Physics, vol. 42, Part 1, pp. 4894-4897 (2003, July). [Times Cited 12] Cited by

  8. T. Sekiguchi, T. Nagao, and S. Hasegawa:
    Transformation dynamics in Ca-induced reconstructions on Si(111) surface,
    e-Journal of Surface Science and Nanotechnology 1, 26-32 (2003). [Times Cited 3]

  9. T. Tanikawa, I. Matsuda, R. Hobara, and S. Hasegawa,
    Variable-temperature micro-four-point probe method for surface electrical conductivity measurements in ultrahigh vacuum,
    e-Journal of Surface Science and Nanotechnology, 1, 50-56 (2003). [Times Cited 53]

  10. S. V. Ryjkov, S. Hasegawa, V. G. Lifshits,
    Epitaxial Growth of Ag on Si(111)-4x1-In Surface     Studied by RHEED, STM, and Electrical Resistance Measurements    ,
    e-Journal of Surface Science and Nanotechnology, 1, 72-79 (2003). [Times Cited 6]

  11. H. Okino, I. Matsuda, T. Tanikawa, and S. Hasegawa,
    Formation of Facet Structures by Au Adsorption on Vicinal Si(111) Surfaces
    e-Journal of Surface Science and Nanotechnology, 1, 84-90 (2003). [Times Cited 7]

  12. J. T. Sadowski, T. Nagao, M. Saito, A. Oreshkin, S. Yaginuma, S. Hasegawa, T. Ohno, and T. Sakurai,
    STM/STS Stduies of the Structural Phase Transition in the Growth of Ultra-Thin Bi Films on Si(111)
    ACTA PHYSICA POLONICA A 104, 381-387 (2003). (Proceedings of the 3rd International Symposium on Scanning Probe Spectroscopy, SPS'03) [Times Cited 1]

  13. 長谷川修司、白木一郎、田邊輔仁、保原麗、金川泰三、松田巌：
    ４探針ＳＴＭの開発と表面電子輸送の測定、
    電子顕微鏡 38, 36 (2003).

  14. 上野将司、松田巌、劉燦華、原沢あゆみ、奥田太一、木下豊彦、長谷川修司：
    表面上の２次元吸着原子ガス相と内殻光電子分光
    表面科学 24, 556 (September, 2003).

2002 (12)

  1. S. S. Lee, J. R. Ahn, N. D. Kim, J. H. Min, C. G. Hwang, J. W. Chung, H. W. Yeom, S. V. Ryjkov, S. Hasegawa:
    Adsorbate-induced pinning of a charge-density wave in the quasi-1D metallic chains; Na-added In/Si(111)-4x1 system,
    Physical Review Letters 88, 196401 (2002). . [Times Cited 47] Cited by

  2. G. LeLay, A. Cricenti, C. Ottaviani, P. Perfetti, T. Tanikawa, I. Matsuda, S. Hasegawa:
    Evidence of asymmetric dimers down to 40 K at the clean Si(100) surface,
    Physical Review B 66, 153317 (2002).[Times Cited 18] Cited by

  3. T. Inaoka, T. Nagao, S. Hasegawa, T. Hildebrandt, M. Henzler:
    Two-dimensional plasmon in a metallic monolayer on a semiconductor surface; exchange-correlation effects,
    Physical Review B 66, 245320 (2002). [Times Cited 18] Cited by

  4. H. Morikawa, I. Matsuda, S. Hasegawa:
    STM Observation of Si(111)-α-√3×√3-Sn at low temperature,
    Physical Review B 65 (Rapid Comm.), 201308(R) (2002). [Times Cited 47] Cited by

  5. S. Hasegawa, I. Shiraki, T. Tanikawa, C. L. Petersen, T. M. Hansen, P. Goggild, and F. Grey:
    Direct measurement of surface-state conductance by microscopic four-point probe method,
    Journal of Physics: Condensed Matter 14, 8379-8392 (2002). [Times Cited 51] Cited by

  6. S. Hasegawa and F. Grey:
    Electronic transport at semiconductor Surfaces: From point-contact transistor to micro-four-point probes-,
    Surface Science 500, 84-104 (2002). [Times Cited 64] Cited by

  7. Xiao Tong, Satoru Ohuchi, Takehiro Tanikawa, Ayumi Harasawa, Taichi Okuda,Yoshinobu Aoyagi , Toyohiko Kinoshita, and Shuji Hasegawa:
    Core-level photoemission of the Si(111)-√21×√21-Ag surface using synchrotron radiation,
    Applied Surface Science 190, 121-128 (2002).[Times Cited 9] Cited by

  8. S. Hasegawa, I. Shiraki, F. Tanabe, and R. Hobara:
    Transport at surface nanostructures measured by four-tip STM,
    Current Applied Physics 2, 465-471 (2002).. [Times Cited 42] Cited by

  9. 長谷川修司（分担執筆）：
    これからの大学等研究施設　第１編「物質科学」　監修　有馬朗人、第6.5節 走査プローブ顕微鏡（ＳＴＭ，ＡＦＭなど）　（文教施設協会・科学新聞社 2002.1）.

  10. 長谷川修司、白木一郎、谷川雄洋、C. L. Petersen、F. Grey:
    マイクロ４端子プローブによる表面電気伝導の測定、
    固体物理　37(5) (2002) 299-308.

  11. 松田巌、Han Woong Yeom、谷川雄洋、登野健介、長谷川修司、太田利明:
    半導体表面上金属超薄膜の量子井戸状態の研究、
    表面科学 23 (8) (2002） 509-518. (日本表面科学会平成15年度奨励賞受賞論文)

  12. 長谷川修司、白木一郎、田邊輔仁、保原麗、金川泰三、谷川雄洋、松田巌、Christian L.. Petersen、Torben M. Hanssen、Peter Boggild、Francois Grey:
    ミクロな４端子プローブによる表面電気伝導の測定、
    表面科学 23 (12) (2002) 740-752. [Times Cited 2]

2001 (12)

  1. T. Nagao, T. Hildebrandt, M. Henzler, and S. Hasegawa：
    Dispersion and damping of a two-dimensional plasmon in a surface-state band,
    Physical Review Letters 86, 5747 (2001). [Times Cited 127] Cited by

  2. I. Matsuda, H.-W. Yeom, T. Tanikawa, K. Tono, T. Nagao, S. Hasegawa, and T. Ohta：
    Growth and electron quantization of the metastable silver films on Si(001),
    Physical Review B 63, 125325 (2001). [Times Cited 49] Cited by

  3. X. Tong, S. Ohuchi, N. Sato, T. Tanikawa, T. Nagao, I. Matsuda, Y. Aoyagi, S. Hasegawa:
    Electronic structures of Ag-induced superstructures on Si(111) surface studied by angle-resolved photoemission spectroscopy and scanning tunneling microscopy,
    Physical Review B 64, 205316 (2001). [Times Cited 45] Cited by

  4. F. Shi, I. Shiraki, T. Nagao, and S. Hasegawa：
    Electromigration and phase transformation of Ag on a Cu-precovered Si(111) surface,
    Surface Science 493, 331-337 (2001). [Times Cited 4] Cited by

  5. T. Sekiguchgi, F. Shimokoshi, T. Nagao, and S. Hasegawa：
    A series of Ca-induced reconstructions on Si(111) surface,
    Surface Science 493, 148-156 (2001). [Times Cited 56] Cited by

  6. S. V. Ryjkov, T. Nagao, V. G. Lifshits, and S. Hasegawa：
    Surface roughness and electrical resistance on Si(100)-2x3-Na surface,
    Surface Science 493, 619-625 (2001). [Times Cited 7] Cited by

  7. T. Nagao, T. Hildebrandt, M. Henzler, S. Hasegawa：
    Two-dimensional plasmon in a surface-state band,
    Surface Sciece 493, 680-686 (2001) [Times Cited 21] Cited by

  8. T. Tanikawa, T. Nagao, S. Hasegawa:
    Grwoth mode and electrical conductance of Ag layers on Si(001) surface,
    Surface Science 493, 389-398 (2001). [Times Cited 11] Cited by

  9. S. V. Ryjkov, T. Nagao, V. G. Lifshits, S. Hasegawa：
    Phase transition and stability of Si(111)-8ד2”-In surface phase at low temperature,
    Surface Science 488, 15-22 (2001). [Times Cited 44] Cited by

  10. I. Shiraki, F. Tanabe, R. Hobara, T. Nagao, S. Hasegawa：
    Independently driven four-tip probes for conductivity measurements in ultlahigh vacuum,
    Surface Science 493, 633-643 (2001). [Times Cited 110] Cited by

  11. 長谷川修司、白木一郎、田邊輔仁、Francois Grey：
    半導体表面での電子輸送 -点接触トランジスタから多探針STM-,
    応用物理 70, 1165-1171 (2001). [Times Cited 2] Cited by

  12. T. Nagao, T. Hildebrandt, M. Henzler, S. Hasegawa:
    Observation of two-dimensional plasmon in a metallic monolayer on silicon surface,
    Proceedings of 25th International Conference on the Physics of Semiconductors (ICPS25), eds. N. Miura and T. Ando, pp. 875-876 (2001, Springer).

2000 (12)

  1. C. L. Petersen, F. Grey, I. Shiraki, S. Hasegawa：
    Microfour-point probe for studying electronic transport through surface states,
    Applied Physics Letters 77, 3782-3784 (Dec, 2000) [Times Cited 62]

  2. S. Hasegawa：
    Surface-State Bands on Silicon as Electron Systems in Reduced Dimensions at Atomic Scales
    Journal of Physics: Condensed Matters 12, R463-R495 (Sep, 2000). [Times Cited 46]

  3. X. Tong, C.-S. Jiang, K. Horikoshi, and S. Hasegawa：
    Surface-state electrical conduction on the Si(111)-√3×√3-Ag surface with noble-metal adatoms,
    Surface Science 449, 125-134 (March, 2000). [Times Cited 13]

  4. S. Hasegawa, K. Tsuchie, K. Toriyama, X. Tong, T. Nagao：
    Surface electronic transport on silicon: Donor- and acceptor-type adsorbates on Si(111)-√3×√3-Ag substrate,
    Applied Surface Science 162/163, 42-47 (July, 2000). [Times Cited 15]

  5. S. Hasegawa, N. Sato, I. Shiraki, C. L. Petersen, P. Boggild, T. M. Hansen, T. Nagao, F. Grey：
    Surface-state bands on silicon - Si(111)-√3×√3-Ag surface superstructure -,
    Japanese Journal of Applied Physics 39, 3815-3822 (June, 2000). [Times Cited 50]

  6. F. X. Shi, I. Shiraki, T. Nagao, and S. Hasegawa:
    Substrate-structure dependence of Ag electromigration on Au-precovered Si(111) surfaces,
    Japanese Journal of Applied Physics 39, 4438-4442 (July, 2000). [Times Cited 4]

  7. T. Nagao, T. Sekiguchi, and S. Hasegawa:
    Epitaxial growth of single-crystal　ultrathin film of Bi on the Si(111) surface,
    Japanese Journal of Applied Physics 39, 4567-4570 (July, 2000). [Times Cited 36]

  8. T. Nagao and S. Hasegawa：
    Construction of an ELS-LEED - an electron energy-loss spectrometer with electrostatic two-dimensional angular scanning-,
    Surface and Interface Analysis 30, 488-492 (Aug, 2000). [Times Cited 14]

  9. I. Shiraki, T. Nagao, S. Hasegawa, C. L. Petersen, P. Boggild, T. M. Hansen, F. Grey：
    Micro-Four-Point Probes in a UHV-Scanning Electron Microscope for In-Situ Surface Conductivity Measurements,
    Surface Review and Letters 7, 533-537 (Dec, 2000). [Times Cited 35]

  10. F. X. Shi, I. Shiraki, T. Nagao, S. Hasegawa:
    Diffusion Anisotropy of Ag and In on Si(111) Surface Studied by UHV-SEM,
    Ultramicroscopy 85, 23-33 (Aug, 2000). [Times Cited 6]

  11. 長谷川修司：
    半導体表面の電子輸送 -原子スケール低次元電子系としてのシリコン表面電子バンド-,
    物性研究, 75, (No. 3) 494-511 (2000, 12).

  12. 長谷川修司：
    結晶表面の１原子層に電気を流す -点接触トランジスタから多探針ＳＴＭへ-,
    学術月報 53, (No. 12) 1269-1274 (2000, 12).

1999 (15)

  1. H. W. Yeom，S. Takeda，E. Rotenberg，I. Matsuda，K. Horikoshi，J. Schaefer，C. M. Lee，S. D. Kevan，T. Ohta，T. Nagao，and S. Hasegawa：
    Instability and charge density wave of metallic quantum chains on a silicon surface，
    Physical Review Letters 82, 4898-4901 (1999). [Times Cited 654] Cited by

  2. N. Sato，T. Nagao，and S. Hasegawa：
    Two-dimensional adatom gas phase on the Si(111)-√3×√3-Ag surface directly observed by scanning tunneling microscopy，
    Physical Review B 60, 16083-16087 (1999) . [Times Cited 50] Cited by

  3. K. Horikoshi，T. Nagao，and S. Hasegawa：
    Structural phase transition on Pb-adsorbed Si(111) surface，
    Physcal Review B 60, 13287-13290 (1999) . [Times Cited 68] Cited by

  4. K. Tsuchie，T. Nagao，and S. Hasegawa：
    Structure of C60 layers on the Si(111)-√3×√3-Ag surface，
    Physical Review B 60, 11131-11134 (1999). [Times Cited 35] Cited by

  5. N. Sato，T. Nagao，S. Takeda，and S. Hasegawa：
    Electron standing waves on the Si(111)-√3×√3-Ag surface，
    Physical Review B 59, 2035-2039 (1999). [Times Cited 53] Cited by

  6. S. Hasegawa，X. Tong，S. Takeda，N. Sato，and T. Nagao：
    Structures and electronic transport on silicon surfaces，
    Progress in Surface Science 60, 89-257 (1999). [Times Cited 267] Cited by

  7. T. Nagao，S. Ohuchi，Y. Matsuoka，and S. Hasegawa：
    Morphology of ultrathin manganese silicide on Si(111)，
    Surface Science 419 (1999) 134-143. [Times Cited 53] Cited by

  8. C.-S. Jiang and S. Hasegawa：
    Photoconductivity of the Si(111)-7x7 and -√3×√3-Ag surfaces，
    Surface Science 427/428, 239-244 (1999). [Times Cited 1] Cited by

  9. H. Aizawa，M. Tsukada，N. Sato，and S. Hasegawa：
    Asymmetric structure of the Si(111)-√3×√3-Ag surface，
    Surface Science 429, L509-L514 (1999). [Times Cited 142] Cited by

  10. N. Sato，T. Nagao，and S. Hasegawa：
    Si(111)-√3×√3-Ag surface at low temperatures; Symmetry breaking and surface twin boundaries，
    Surface Science 422, 65-73 (1999). [Times Cited 75] Cited by

  11. X. Tong，K. Horikoshi，and S. Hasegawa：
    Structures and electrical conductance of Pb-covered Si(111) surface，
    Phys. Rev. B 60, 5653-5658 (1999) . [Times Cited 28] Cited by

  12. D. A. Tsukanov，S. V. Ryzhkov，S. Hasegawa，and V. G. Lifshits：
    Surface conductivity of submonolayer Au/Si system，
    Phys. Low-Dim. Struc. 7/8, 149-154 (1999). [Times Cited 7] Cited by

  13. S. Hasegawa：
    Atomic imaging of macroscopic surface conductivity,
    Current Opinion in Solid State & Materials Science 4, 429-434 (1999). [Times Cited 6] Cited by

  14. 長谷川修司：
    シリコン表面超構造の物理 － ２次元および１次元金属 －，
    日本物理学会誌 54 (5), 347-356 (1999). [Times Cited 4] Cited by

  15. 長谷川修司，佐藤昇男，長尾忠昭：
    シリコンの表面構造と電子輸送，
    固体物理 34 (2), 81-89 (1999). Cited by

1998 (10)

  1. X. Tong，C.-S. Jiang，and S. Hasegawa：
    Electronic structure of the Si(111)-√21x√21-(Ag+Au) surface，
    Physical Review B 57 (1998) 9015-9023. [Times Cited 76]

  2. T. Nagao，K. Tsuchie，S. Hasegawa，and S. Ino：
    Structural phase transitions of Si(111)-(√3x√3)R30-Au：phase transitions in domain wall configurations，
    Physical Review B 57 (1998) 10100-10109. [Times Cited 102]

  3. S. Hasegawa，C.-S. Jiang，Y. Nakajima，T. Nagao，and X. Tong：
    Surface electrical conduction correlated with surface structures and atom dynamics，
    Surface Review and Letters 5 (3/4) (1998) 803-819. [Times Cited 11]

  4. Z. H. Zhang，S. Hasegawa，and S. Ino：
    Epitaxial growth of Cu onto Si(111) surfaces at low temperature，
    Surface Science 415 (1998) 363-375. [Times Cited 27]

  5. X. Tong，Y. Sugiura，T. Nagao，T. Takami，S. Takeda，S. Ino，and S. Hasegawa：
    STM observations of Ag adsorption on the Si(111)-√3x√3-Ag surface at low temperatures，
    Surface Science 408 (1-3) (1998) 146-159. [Times Cited 43]

  6. S. Takeda，X. Tong， S. Ino，and S. Hasegawa：
    Structure-dependent electrical conductance through indium atomic layers on Si(111) surface，
    Surface Science 415 (1998) 264-273. [Times Cited 32]

  7. T. Nagao，C. Voges，H. Pfnuer，M. Henzler，S. Ino，and S. Hasegawa：
    Diffraction from small antiphase domains：α-√3×√3，β-√3×√3，6x6 phases of Au adsorbed Si(111)，
    Applied Surface Science 130-132 (1998) 47-53. [Times Cited 11]

  8. 長谷川修司，冬暁，中島雄二，姜春生，長尾忠昭：
    シリコン表面構造と表面電気伝導 (1) (2)，
    表面科学 19 (1998) 114-121 ，193-200 .

  9. 長谷川修司：
    J. J. トムソンの電子発見から101年，
    パリテイ 13 (8) (1998) 57-61.

  10. 長谷川修司：
    応用物理用語辞典（オーム社，1998）（分担執筆）.

1997年 (9)

  1. Y. Nakajima，S. Takeda，T. Nagao，S. Hasegawa，and X. Tong：
    Surface electrical conduction due to carrier doping into a surface-state band on Si(111)-√3x√3-Ag，
    Physical Review B 56 (1997) 6782-6787. [Times Cited 85] Cited by

  2. Z. H. Zhang，S. Hasegawa，and S. Ino：
    RHEED intensity oscillation during epitaxial growth of Ag on Si(111) surfaces at low temperature，
    Physical Review B 55 (1997) 9983-9989. [Times Cited 31] Cited by

  3. Y. Nakajima，C. Voges，T. Nagao，S.Hasegawa，G. Klos，and H. Pfnur：
    Critical scattering at the order-disorder phase transition of Si(111)-√3×√3R30゜-Au surface：A phase transition with particle exchange，
    Physical Review B 55 (1997) 8129-8135. [Times Cited 21] Cited by

  4. X. Tong，S. Hasegawa，and S. Ino：
    Structures and electrical conductance of the Si(111)-√3x√3-Ag surface with additional Ag adsorption at low temperatures，
    Physical Review B 55 (1997) 1310-1313. [Times Cited 46] Cited by

  5. S. Hasegawa，C.-S. Jiang，X. Tong，and Y. Nakajima：
    Electrical functional properties of surface superstructures on semiconductors，
    Advances in Colloid and Interface Science 71/72 (1997) 125-145. [Times Cited 6] Cited by

  6. S. Hasegawa，X. Tong，C.-S. Jiang，Y. Nakajima，and T. Nagao：
    Electrical conduction via surface-state band，
    Surface Science 386 (1997) 322-327. [Times Cited 39] Cited by

  7. C.-S. Jiang，X. Tong，S. Hasegawa，and S. Ino：
    Electrical conduction through the surface-state band of the Si(111)-√21x√21-(Ag+Au) structure，
    Surface Science 376 (1997) 69-76. [Times Cited 34] Cited by

  8. 長谷川修司：
    低温型超高真空走査トンネル顕微鏡による表面の観察，
    低温センターだより 第23号(1997) 1-6.

  9. 長谷川修司：
    表面電子準位バンドを通る電気伝導、
    理学部広報　２９巻３号(1997.12)（東京大学理学部）.

1996 (2)

  1. Y. Nakajima，G. Uchida，T. Nagao，and S. Hasegawa：
    Two-dimensional adatom gas on the Si(111)-√3x√3-Ag surface detected through changes in electrical conduction，
    Physical Review B 54 (1996) 14134-14138. [Times Cited 41] Cited by

  2. C.-S. Jiang，S. Hasegawa，and S. Ino：
    Surface conductivity for Au or Ag on Si(111)，
    Physical Review B 54 (1996) 10389-10392. [Times Cited 39] Cited by

1995 (4)

  1. Z. H. Zhang，S. Hasegawa，and S. Ino：
    Reconstruction and growth of Ag on the Si(111)-√3x√3-Ag surface at low temperature，
    Physical Review B 52 (1995) 10760-10763. [Times Cited 36] Cited by

  2. S. Hasegawa，Y. Nagai，T. Oonishi，N. Kobayashi，T. Miyake，S. Murakami，Y. Ishii，D. Hanawa，and S. Ino：
    Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis    ，
    Phase Transitions 53 (1995) 87-114.[Times Cited 8] Cited by

  3. 長谷川修司：
    低温領域での表面物理，
    低温センターだより 20 (1995) 23-31.

  4. 長谷川修司：
    電子波と表面，
    物性研究 65 (1995) 272-286.

1994年 (5)

  1. 長谷川修司：
    「表面変性エピタキシー」を整理すると，
    表面科学 15 (1994) 553- 553.

  2. S. Hasegawa and S. Ino：
    Correlation between atomic-scale structures and macroscopic electrical properties of metal-covered Si(111) surfaces investigated by in-situ measurements in UHV，
    in The Structure of Surfaces IV (Proceedings of the 4th International Conference on the Structure of Surfaces)，ed. S. Y. Tong (World Scientific. 1994) 377-382.

  3. Z. H. Zhang，S. Hasegawa，and S. Ino：
    RHEED-TRAXS study of surface structure and thermal desorption of Cu on Si(111) surface，
    in The Structure of Surfaces IV (Proceedings of the 4th International Conference on the Structure of Surfaces)，ed. S. Y. Tong (World Scientific. 1994) 371-376.

  4. S. Ino，S. Hasegawa，and T. Yamanaka：
    Surface dynamics and surface conductance in epitaxial growth studied by RHEED and TRAXS，
    Phys. Low-Dim. Struct. 2 (1994) 1-8 (Proc. The 1st Int. Conf. on Physics of Low Dimensional Structure).

  5. S. Hasegawa，Z. H. Zhang，C. S. Jiang，and S. Ino：
    Electrical transport properties of Si(111) surface with control of its atomic-scale structures，
    Proceedings of JRDC International Symposium on Nanostructures and Quantum Effects，ed. H. Sakaki and H. Noge (Springer，1994) 330-340.


Publication before 1993 is listed here.